Surface Photovoltage and Deep Level Transient Spectroscopy Measurement of the Fe Impurities in Front‐End Operations of the IC CMOS Process

1995 ◽  
Vol 142 (6) ◽  
pp. L98-L99 ◽  
Author(s):  
K. Nauka ◽  
D. A. Gomez
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Surface Photovoltage ◽  
Cmos Process ◽  
Spectroscopy Measurement ◽  
Front End ◽  
Transient Spectroscopy ◽  
Fe Impurities

Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy measurement

2005 ◽  
Vol 86 (7) ◽  
pp. 072109 ◽  
Author(s):  
S. W. Johnston ◽  
S. R. Kurtz ◽  
D. J. Friedman ◽  
A. J. Ptak ◽  
R. K. Ahrenkiel ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Spectroscopy Measurement ◽  
Transient Spectroscopy ◽  
P Type

Deep Level Transient Spectroscopy Study of Dislocations in SiGe/Si Heterostructures

2007 ◽  
Vol 994 ◽  
Author(s):  
Jinggang Lu ◽  
Yongkook Park ◽  
George A Rozgonyi
Keyword(s):  
Electrical Activity ◽  
Point Defects ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Study ◽  
Trap Concentration ◽  
Intrinsic Point Defects ◽  
Grown Sample ◽  
Transient Spectroscopy ◽  
Fe Impurities

AbstractExamination of dislocations in the as-grown and annealed SiGe/Si heterostructures by DLTS indicates the three strong DLTS bands from 70 to 270K in the as-grown sample are likely related to intrinsic point defects or dislocation trails. A small amount of Fe at dislocations dramatically increases their electrical activity, and the trap concentration due to Fe-decorated dislocations can well exceed the total Fe impurities presented along dislocations. Through examining the competitive trapping of Fe at boron and dislocations, it is suggested that Fe trapping only happens at disordered sites along dislocations, such as kinks.

Non-Contact, Wafer-Scale Deep Level Transient Spectroscopy (DLTS) Based on Surface Photovoltage (SPV)

1991 ◽  
Vol 240 ◽  
Author(s):  
Jacek Lagowski ◽  
Andrzej Morawski ◽  
Piotr Edelman
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Thermal Emission ◽  
Deep Level ◽  
Depletion Region ◽  
Capacitive Coupling ◽  
Surface Photovoltage ◽  
Surface Barrier ◽  
Schottky Type ◽  
Transient Spectroscopy ◽  
Non Destructive

ABSTRACTWe present a new version of a deep level transient spectroscopy which is suitable for non-contact, non-destructive determination of deep level defects in semiconductor wafers without preparation of metal-semiconductor diodes or p-n junctions.The method relies on deep level thermal emission measurements by the surface photovoltage (SPV) transient following an optical filling pulse. Non-equilibrium occupation of deep levels is realized within the native surface depletion region by the capture of excess minority carriers. Since the native Schottky-type surface barrier is commonly present on semiconductor surfaces, the approach requires no wafer pre-treatments. Non-contact SPV measurements are realized using a capacitive coupling to the wafer front and the wafer back.The quantitative principles of the SPV-DLTS approach are discussed using experimental data obtained on GaAs.

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