A compact microcomputer-based deep level transient spectroscopy measurement system

1990 ◽  
Vol 39 (3) ◽  
pp. 467-472 ◽  
Author(s):  
F.J. Sanchez ◽  
F. Sandoval ◽  
F. Garcia-Perez
Keyword(s):  
Measurement System ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Measurement ◽  
Transient Spectroscopy

Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy measurement

2005 ◽  
Vol 86 (7) ◽  
pp. 072109 ◽  
Author(s):  
S. W. Johnston ◽  
S. R. Kurtz ◽  
D. J. Friedman ◽  
A. J. Ptak ◽  
R. K. Ahrenkiel ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Spectroscopy Measurement ◽  
Transient Spectroscopy ◽  
P Type

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

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