Sensitivity analysis of bulk traps detection in analog deep‐level transient spectroscopy measurement systems with exponentially weighted average

1989 ◽  
Vol 60 (1) ◽  
pp. 106-112 ◽  
Author(s):  
K. Dmowski ◽  
A. Jakubowski
Keyword(s):  
Sensitivity Analysis ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Weighted Average ◽  
Measurement Systems ◽  
Spectroscopy Measurement ◽  
Transient Spectroscopy ◽  
Exponentially Weighted

Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy measurement

2005 ◽  
Vol 86 (7) ◽  
pp. 072109 ◽  
Author(s):  
S. W. Johnston ◽  
S. R. Kurtz ◽  
D. J. Friedman ◽  
A. J. Ptak ◽  
R. K. Ahrenkiel ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Spectroscopy Measurement ◽  
Transient Spectroscopy ◽  
P Type

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

2002 ◽  
Vol 719 ◽  
Author(s):  
Masashi Kato ◽  
Masaya Ichimura ◽  
Eisuke Arai ◽  
Shigehiro Nishino
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Activation Energies ◽  
Thickness Dependence ◽  
Epitaxial Layers ◽  
Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

Sign in / Sign up

Export Citation Format

Share Document