Deep level transient spectroscopy measurement on tin-doped n-indium selenide

B. Mar�; A. Segura; A. Casanovas; A. Chevy

doi:10.1007/bf00323649

Deep level transient spectroscopy measurement on tin-doped n-indium selenide

Applied Physics A Solids and Surface ◽

10.1007/bf00323649 ◽

1991 ◽

Vol 52 (6) ◽

pp. 373-379 ◽

Cited By ~ 6

Author(s):

B. Mar� ◽

A. Segura ◽

A. Casanovas ◽

A. Chevy

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Indium Selenide ◽

Spectroscopy Measurement ◽

Transient Spectroscopy

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A charge-based deep level transient spectroscopy measurement system and characterization of a ZnO-based varistor and a Fe-doped SrTiO3dielectric

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.026601 ◽

2016 ◽

Vol 55 (2) ◽

pp. 026601 ◽

Cited By ~ 5

Author(s):

Takafumi Okamoto ◽

Jeffrey Long ◽

Rudeger H. T. Wilke ◽

Joseph Stitt ◽

Russell Maier ◽

...

Keyword(s):

Measurement System ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Spectroscopy Measurement ◽

Transient Spectroscopy ◽

A Charge

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Investigation of impurity levels inn-type indium selenide by means of Hall effect and deep level transient spectroscopy

Applied Physics A Solids and Surface ◽

10.1007/bf00624719 ◽

1983 ◽

Vol 31 (3) ◽

pp. 139-145 ◽

Cited By ~ 59

Author(s):

A. Segura ◽

K. W�nstel ◽

A. Chevy

Keyword(s):

Hall Effect ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Indium Selenide ◽

Transient Spectroscopy

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A compact microcomputer-based deep level transient spectroscopy measurement system

IEEE Transactions on Instrumentation and Measurement ◽

10.1109/19.106274 ◽

1990 ◽

Vol 39 (3) ◽

pp. 467-472 ◽

Cited By ~ 1

Author(s):

F.J. Sanchez ◽

F. Sandoval ◽

F. Garcia-Perez

Keyword(s):

Measurement System ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Spectroscopy Measurement ◽

Transient Spectroscopy

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Hall effect and deep level transient spectroscopy measurements in indium selenide doped with chlorine

Solar Energy Materials and Solar Cells ◽

10.1016/0927-0248(92)90031-j ◽

1992 ◽

Vol 28 (3) ◽

pp. 223-232 ◽

Cited By ~ 5

Author(s):

G MICOCCI ◽

A TEPORE ◽

R RELLA ◽

P SICILIANO

Keyword(s):

Hall Effect ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Indium Selenide ◽

Transient Spectroscopy

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Surface Photovoltage and Deep Level Transient Spectroscopy Measurement of the Fe Impurities in Front‐End Operations of the IC CMOS Process

Journal of The Electrochemical Society ◽

10.1149/1.2044258 ◽

1995 ◽

Vol 142 (6) ◽

pp. L98-L99 ◽

Cited By ~ 3

Author(s):

K. Nauka ◽

D. A. Gomez

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Surface Photovoltage ◽

Cmos Process ◽

Spectroscopy Measurement ◽

Front End ◽

Transient Spectroscopy ◽

Fe Impurities

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Acceptor levels in indium selenide. An investigation by means of the Hall effect, deep-level-transient spectroscopy and photoluminescence

Applied Physics A Solids and Surface ◽

10.1007/bf00616698 ◽

1987 ◽

Vol 44 (3) ◽

pp. 249-260 ◽

Cited By ~ 41

Author(s):

A. Segura ◽

M. C. Mart�nez-Tom�s ◽

B. Mar� ◽

A. Casanovas ◽

A. Chevy

Keyword(s):

Hall Effect ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Indium Selenide ◽

Transient Spectroscopy

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Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy measurement

Applied Physics Letters ◽

10.1063/1.1865328 ◽

2005 ◽

Vol 86 (7) ◽

pp. 072109 ◽

Cited By ~ 21

Author(s):

S. W. Johnston ◽

S. R. Kurtz ◽

D. J. Friedman ◽

A. J. Ptak ◽

R. K. Ahrenkiel ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Minority Carrier ◽

Deep Level ◽

Spectroscopy Measurement ◽

Transient Spectroscopy ◽

P Type

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Sensitivity analysis of bulk traps detection in analog deep‐level transient spectroscopy measurement systems with exponentially weighted average

Review of Scientific Instruments ◽

10.1063/1.1140592 ◽

1989 ◽

Vol 60 (1) ◽

pp. 106-112 ◽

Cited By ~ 9

Author(s):

K. Dmowski ◽

A. Jakubowski

Keyword(s):

Sensitivity Analysis ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Weighted Average ◽

Measurement Systems ◽

Spectroscopy Measurement ◽

Transient Spectroscopy ◽

Exponentially Weighted

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Surface states in an n-GaAs/plasma grown native oxide — A modified deep level transient spectroscopy measurement

Surface Science ◽

10.1016/0039-6028(79)90464-3 ◽

1979 ◽

Vol 86 ◽

pp. 826-834 ◽

Cited By ~ 4

Author(s):

Naoki Yokoyama ◽

Takashi Mimura ◽

Masumi Fukuta

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Surface States ◽

Native Oxide ◽

Spectroscopy Measurement ◽

Transient Spectroscopy

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Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n–GaN Schottky diode

Superlattices and Microstructures ◽

10.1016/j.spmi.2016.11.011 ◽

2017 ◽

Vol 101 ◽

pp. 529-536

Author(s):

S. Amor ◽

A. Ahaitouf ◽

Az Ahaitouf ◽

J.P. Salvestrini ◽

A. Ougazzaden

Keyword(s):

Schottky Diode ◽

Deep Level Transient Spectroscopy ◽

Minority Carrier ◽

Deep Level ◽

Spectroscopy Measurement ◽

Carrier Traps ◽

Transient Spectroscopy

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