HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition
Keyword(s):
The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.
2018 ◽
Vol 36
(1)
◽
pp. 01A118
◽
Keyword(s):
2016 ◽
Vol 04
(04)
◽
pp. 1640010
◽
2018 ◽
Vol 36
(1)
◽
pp. 01A109
◽
Keyword(s):
Keyword(s):
Electron-Enhanced Atomic Layer Deposition of Boron Nitride Thin Films at Room Temperature and 100 °C
2018 ◽
Vol 122
(17)
◽
pp. 9455-9464
◽
Keyword(s):
Keyword(s):