scholarly journals HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

Impact ◽  
2020 ◽  
Vol 2020 (5) ◽  
pp. 16-18
Author(s):  
Fumihiko Hirose

Thin films can be used to improve the surface properties of materials, enhancing elements such as absorption, abrasion resistance and corrosion resistance, for example. These thin films provide the foundation for a variety of applications in various fields and their applications depend on their morphology and stability, which is influenced by how they are deposited. Thin films can be deposited in different ways. One of these is a technology called atomic layer deposition (ALD). Professor Fumihiko Hirose, a scientist based at the Graduate School of Science and Engineering, Yamagata University, Japan, is conducting research on the room temperature ALD of oxide metals. Along with his team, Professor Hirose has developed a new and improved way of performing ALD to create thin films, and the potential applications are endless.


2020 ◽  
Vol 8 (36) ◽  
pp. 12662-12668
Author(s):  
Henrik H. Sønsteby ◽  
Erik Skaar ◽  
Jon E. Bratvold ◽  
John W. Freeland ◽  
Angel Yanguas-Gil ◽  
...  

Cu-Substitution in LaNiO3 by atomic layer deposition provides films spanning six orders of magnitude in resistivity, with metal insulator transition temperatures from 0 K to room temperature.


Nanoscale ◽  
2021 ◽  
Author(s):  
Anton Brown ◽  
John Greenwood ◽  
César Lockhart de la Rosa ◽  
Miriam Candelaria Rodriguez Gonzalez ◽  
Ken Verguts ◽  
...  

The integration of graphene, and more broadly two-dimensional materials, into devices and hybrid materials often requires the deposition of thin films on their usually inert surface. As a result, strategies...


2018 ◽  
Vol 36 (1) ◽  
pp. 01A118 ◽  
Author(s):  
Jaclyn K. Sprenger ◽  
Huaxing Sun ◽  
Andrew S. Cavanagh ◽  
Steven M. George

2016 ◽  
Vol 04 (04) ◽  
pp. 1640010 ◽  
Author(s):  
Hongfei Liu

Atomic layer deposition (ALD) has long been developed for conformal coating thin films on planar surfaces and complex structured substrates based on its unique sequential process and self-limiting surface chemistry. In general, the coated thin films can be dielectrics, semiconductors, conductors, metals, etc., while the targeted surface can vary from those of particles, wires, to deep pores, through holes, and so on. The ALD coating technique, itself, was developed from gas-phase chemical vapor deposition, but now it has been extended even to liquid phase coating/growth. Because the thickness of ALD growth is controlled in atomic level ([Formula: see text]0.1[Formula: see text]nm), it has recently been employed for producing two-dimensional (2D) materials, typically semiconducting nanosheets of transition metal dichalcogenides (TMDCs). In this paper, we briefly introduce recent progress in ALD of multifunctional oxides and 2D TMDCs with the focus being placed on suitable ALD precursors and their ALD processes (for both binary compounds and ternary alloys), highlighting the remaining challenges and promising potentials.


2018 ◽  
Vol 36 (1) ◽  
pp. 01A109 ◽  
Author(s):  
Julian Pilz ◽  
Alberto Perrotta ◽  
Paul Christian ◽  
Martin Tazreiter ◽  
Roland Resel ◽  
...  

2010 ◽  
Vol 518 (22) ◽  
pp. 6432-6436 ◽  
Author(s):  
Byoung H. Lee ◽  
Sangho Cho ◽  
Jae K. Hwang ◽  
Su H. Kim ◽  
Myung M. Sung

2018 ◽  
Vol 122 (17) ◽  
pp. 9455-9464 ◽  
Author(s):  
Jaclyn K. Sprenger ◽  
Huaxing Sun ◽  
Andrew S. Cavanagh ◽  
Alexana Roshko ◽  
Paul T. Blanchard ◽  
...  

2006 ◽  
Vol 514 (1-2) ◽  
pp. 145-149 ◽  
Author(s):  
Matti Putkonen ◽  
Lauri Niinistö

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