Cu Wettability and Diffusion Barrier Property of Ru Thin Film for Cu Metallization

2005 ◽  
Vol 152 (8) ◽  
pp. G594 ◽  
Author(s):  
Hoon Kim ◽  
Toshihiko Koseki ◽  
Takayuki Ohba ◽  
Tomohiro Ohta ◽  
Yasuhiko Kojima ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Barrier Property ◽  
Cu Metallization ◽  
And Diffusion

Properties of reactively sputtered W–B–N thin film as a diffusion barrier for Cu metallization on Si

2008 ◽  
Vol 94 (3) ◽  
pp. 691-695 ◽  
Author(s):  
L. C. Leu ◽  
D. P. Norton ◽  
L. McElwee-White ◽  
T. J. Anderson
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Cu Metallization

Improvement of Diffusion Barrier Performance of Ru Thin Film by Incorporating a WHfN Underlayer for Cu Metallization

2011 ◽  
Vol 14 (2) ◽  
pp. H84 ◽  
Author(s):  
Chun-Xiao Yang ◽  
Shi-Jin Ding ◽  
David Wei Zhang ◽  
Peng-Fei Wang ◽  
Xin-Ping Qu ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Cu Metallization ◽  
Barrier Performance

Research on HfSiN Diffusion Barrier Thin Film for Micro-Nanoscale ULSI-Cu Metallization

2014 ◽  
Vol 809-810 ◽  
pp. 583-588
Author(s):  
Xue Mei Liu ◽  
Xiu Hua Chen ◽  
Yong Qiang Han ◽  
Wen Hui Ma ◽  
Jia Li He ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Si Substrate ◽  
Cu Metallization ◽  
Diffusion Barrier Layer ◽  
Structure Morphology ◽  
Large Particles ◽  
Before And After ◽  
Failure Temperature ◽  
Annealing Experiments

HfSiN/Cu/HfSiN/SiO2/Si multilayer films were prepared on Si substrate via magnetron sputtering technology. Annealing experiments of samples among 400°C and 700°C were carried out in order to investigate the anti-diffusion performance of HfSiN thin film to Cu. XRD, AFM and FPP were used to characterize the structure, morphology and the resistivity of the thin films before and after annealing, respectively. The failure temperature and failure mechanism of HfSiN thin film were analyzed. The anti-diffusion failure temperature of HfSiN thin film is 600 °C. And the main reason is that a large number of Cu large particles passed through HfSiN diffusion barrier layer and reacted with Si substrate and oxygen to generate Cu3Si and CuO with high resistance.

scholarly journals Mechanical Properties and Diffusion Barrier Performance of CrWN Coatings Fabricated through Hybrid HiPIMS/RFMS

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 690
Author(s):  
Li-Chun Chang ◽  
Cheng-En Wu ◽  
Tzu-Yu Ou
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Diffusion Barrier ◽  
Scratch Resistance ◽  
Face Centered Cubic ◽  
Cu Metallization ◽  
Barrier Performance ◽  
Face Centered ◽  
And Diffusion ◽  
Hardness Values

CrWN coatings were fabricated through a hybrid high-power impulse magnetron sputtering/radio-frequency magnetron sputtering technique. The phase structures, mechanical properties, and tribological characteristics of CrWN coatings prepared with various nitrogen flow ratios (fN2s) were investigated. The results indicated that the CrWN coatings prepared at fN2 levels of 0.1 and 0.2 exhibited a Cr2N phase, whereas the coatings prepared at fN2 levels of 0.3 and 0.4 exhibited a CrN phase. These CrWN coatings exhibited hardness values of 16.7–20.2 GPa and Young’s modulus levels of 268–296 GPa, which indicated higher mechanical properties than those of coatings with similar residual stresses prepared through conventional direct current magnetron sputtering. Face-centered cubic (fcc) Cr51W2N47 coatings with a residual stress of −0.53 GPa exhibited the highest wear and scratch resistance. Furthermore, the diffusion barrier performance of fcc CrWN films on Cu metallization was explored, and they exhibited excellent barrier characteristics up to 650 °C.

Sign in / Sign up

Export Citation Format

Share Document