Effect of Si Content on the Barrier Property of Zr–Si as a Diffusion Barrier for Cu Metallization

2008 ◽  
Vol 155 (12) ◽  
pp. H951 ◽  
Author(s):  
Ying Wang ◽  
Fei Cao ◽  
Yun-tao Liu ◽  
Lei Shao
Keyword(s):  
Diffusion Barrier ◽  
Barrier Property ◽  
Cu Metallization ◽  
Si Content

Cu Wettability and Diffusion Barrier Property of Ru Thin Film for Cu Metallization

2005 ◽  
Vol 152 (8) ◽  
pp. G594 ◽  
Author(s):  
Hoon Kim ◽  
Toshihiko Koseki ◽  
Takayuki Ohba ◽  
Tomohiro Ohta ◽  
Yasuhiko Kojima ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Barrier Property ◽  
Cu Metallization ◽  
And Diffusion

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

Adhesion and Cu Diffusion Barrier Properties of a MnOx Barrier Layer Formed with Thermal MOCVD

2009 ◽  
Vol 1156 ◽  
Author(s):  
Koji Neishi ◽  
Vijay Kumar Dixit ◽  
S. Aki ◽  
Junichi Koike ◽  
K. Matsumoto ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Diffusion Barrier ◽  
Valence State ◽  
Dielectric Layer ◽  
Barrier Properties ◽  
Barrier Property ◽  
Adhesion Property ◽  
Composition Analysis ◽  
Good Adhesion ◽  
Deposition Chamber

AbstractA thin-amorphous MnOx layer using self-forming barrier process with a Cu-Mn alloy shows good adhesion and diffusion barrier properties between copper and dielectric layer, resulting in excellent reliability for stress and electromigration. Meanwhile, chemical vapor deposition (CVD) can be employed for conformal deposition of the barrier layer in narrow trenches and vias for future technology node. In our previous research, a thin and uniform amorphous MnOx layer could be formed on TEOS-oxide by thermal metal-organic CVD (MOCVD), showing a good diffusion barrier property. In addition, a good adhesion strength is necessary between a Cu line and a dielectric layer not only to ensure good SM and EM resistance but also to prevent film delamination under mechanical or thermal stress conditions during fabrication process such as chemical mechanical polishing or high temperature annealing. To date, no information is available with regard to the adhesion property of CVD-MnOx. In this work, we report diffusion barrier property in further detail and adhesion property in PVD-Cu/CVD-MnOx/SiO2/Si. The temperature dependence of the adhesion property is correlated with the chemical composition and valence state of Mn investigated with SIMS and Raman spectroscopy.Substrates were p-type Si wafers having a plasma-TEOS oxide of 100nm in thickness. CVD was carried out in a deposition chamber. A manganese precursor was vaporized and introduced into the deposition chamber with H2 carrier gas. After the CVD, a Cu overlayer was deposited on some samples using a sputtering system in load lock chamber of the CVD machine. The diffusion barrier property of the MnOx film was investigated in annealed samples at 400 oC for 100 hours in a vacuum of better than 1.0×10-5 Pa. The Adhesion property of Mn oxide was investigated by Scotch tape test in the as-deposited and in the annealed Cu/CVD-MnOx/TEOS samples. The obtained samples were analyzed for thickness and microstructure with TEM, chemical bonding states of the MnOx layer with XPS, and composition of each layer with SIMS.In the CVD deposition below 300 °C, no Cu delamination was observed both in the as-deposited and in the annealed Cu/CVD-MnOx/SiO2 samples. On the other hand, in the CVD deposition at 400 °C, the Cu films were delaminated from the CVD-MnOx/TEOS substrates. The XPS peak position of Mn 2p and Mn 3s spectra indicated that the valence state of Mn in the as-deposited barrier layer below 400 °C was 2+. Composition analysis with SIMS as well as Raman also indicated the presence of a larger amount of carbon at 400 °C than at less than 300 °C. The good adhesion between Cu and MnO could be attributed to an amount of carbon inclusion in the CVD barrier layer.

Effect of density on the diffusion barrier property of TiNx films between Cu and Si

2004 ◽  
Vol 85 (2-3) ◽  
pp. 444-449 ◽  
Author(s):  
Wen-Horng Lee ◽  
Yu-Lin Kuo ◽  
Hong-Ji Huang ◽  
Chiapyng Lee
Keyword(s):  
Diffusion Barrier ◽  
Barrier Property
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