Improvement of Diffusion Barrier Performance of Ru Thin Film by Incorporating a WHfN Underlayer for Cu Metallization

2011 ◽  
Vol 14 (2) ◽  
pp. H84 ◽  
Author(s):  
Chun-Xiao Yang ◽  
Shi-Jin Ding ◽  
David Wei Zhang ◽  
Peng-Fei Wang ◽  
Xin-Ping Qu ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Cu Metallization ◽  
Barrier Performance

Diffusion barrier performance of amorphous W–Ti–N films in Cu metallization

Vacuum ◽  
2010 ◽  
Vol 84 (11) ◽  
pp. 1270-1274 ◽  
Author(s):  
Wang Qingxiang ◽  
Liang Shuhua ◽  
Wang Xianhui ◽  
Fan Zhikang
Keyword(s):  
Diffusion Barrier ◽  
Cu Metallization ◽  
Barrier Performance

Research of CoSiN Film as Diffusion Barrier in ULSI-Cu Metallization

2014 ◽  
Vol 988 ◽  
pp. 130-133
Author(s):  
Zai Yu Zhang ◽  
Ma Jia Wu ◽  
Xiu Hua Chen
Keyword(s):  
Thermal Stability ◽  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Diffusion Barrier ◽  
Good Thermal Stability ◽  
Cu Metallization ◽  
Diffusion Barrier Layer ◽  
Barrier Performance ◽  
Si Films

CoSiN film can be used as diffusion barrier layer in ULSI-Cumetallization.CoSiN/Cu/CoSiN/SiO2/Si films are prepared by magnetron sputtering technology. Four-point-probe, SGC-10,Atomic forced microscopy (AFM) are used to detect the resistivity,film thickness and surface morphology. It is investigated the barrier performance of CoSiN film for Cu metallization in sub-45nm technology. The results shows that the resistivity and the components ofCoSiN/Cu/CoSiN/SiO2/Si film do not have the obvious change after being annealing at 550°C in Ar atomosphere, and CoSiN film can keep good barrier performance for Cu line. This multi-film shows good thermal stability .

Properties of reactively sputtered W–B–N thin film as a diffusion barrier for Cu metallization on Si

2008 ◽  
Vol 94 (3) ◽  
pp. 691-695 ◽  
Author(s):  
L. C. Leu ◽  
D. P. Norton ◽  
L. McElwee-White ◽  
T. J. Anderson
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Cu Metallization

Improvement of Ta diffusion barrier performance in Cu metallization by insertion of a thin Zr layer into Ta film

1998 ◽  
Vol 72 (22) ◽  
pp. 2832-2834 ◽  
Author(s):  
Joon Seop Kwak ◽  
Hong Koo Baik ◽  
Jong-Hoon Kim ◽  
Sung-Man Lee
Keyword(s):  
Diffusion Barrier ◽  
Cu Metallization ◽  
Barrier Performance

Diffusion barrier performance of nanoscale TaNx thin-film

2007 ◽  
Vol 17 (4) ◽  
pp. 733-738 ◽  
Author(s):  
Ji-cheng ZHOU ◽  
Hai-bo CHEN ◽  
You-zhen LI
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Barrier Performance

Research on HfSiN Diffusion Barrier Thin Film for Micro-Nanoscale ULSI-Cu Metallization

2014 ◽  
Vol 809-810 ◽  
pp. 583-588
Author(s):  
Xue Mei Liu ◽  
Xiu Hua Chen ◽  
Yong Qiang Han ◽  
Wen Hui Ma ◽  
Jia Li He ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffusion Barrier ◽  
Si Substrate ◽  
Cu Metallization ◽  
Diffusion Barrier Layer ◽  
Structure Morphology ◽  
Large Particles ◽  
Before And After ◽  
Failure Temperature ◽  
Annealing Experiments

HfSiN/Cu/HfSiN/SiO2/Si multilayer films were prepared on Si substrate via magnetron sputtering technology. Annealing experiments of samples among 400°C and 700°C were carried out in order to investigate the anti-diffusion performance of HfSiN thin film to Cu. XRD, AFM and FPP were used to characterize the structure, morphology and the resistivity of the thin films before and after annealing, respectively. The failure temperature and failure mechanism of HfSiN thin film were analyzed. The anti-diffusion failure temperature of HfSiN thin film is 600 °C. And the main reason is that a large number of Cu large particles passed through HfSiN diffusion barrier layer and reacted with Si substrate and oxygen to generate Cu3Si and CuO with high resistance.

Improvement of Zr-N Diffusion Barrier Performance in Cu Metallization by Insertion of a Thin Zr Layer

2013 ◽  
Vol 347-350 ◽  
pp. 1148-1152
Author(s):  
Yan Nan Zhai ◽  
Hun Zhang ◽  
Kun Yang ◽  
Zhao Xin Wang ◽  
Li Li Zhang
Keyword(s):  
Diffusion Barrier ◽  
Barrier Properties ◽  
Fast Diffusion ◽  
X Ray Diffraction ◽  
Multilayered Films ◽  
X Ray ◽  
Cu Metallization ◽  
Cu Film ◽  
Barrier Performance ◽  
Failure Temperature

In order to increase the failure temperature of Zr-N diffusion barrier for Cu, the effect of insertion of a thin Zr layer into Zr-N film on Zr-N diffusion barrier performance in Cu metallization was investigated by means of X-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, and 4-point probe technique. XRD,SEM ,AES and FPP results show that the insertion of a thin Zr layer into Zr-N film improves barrier properties significantly when the ZrN / Zr/ZrN barrier layers are deposited by RF reactive magnetron sputtering and Zr-N(10nm)/Zr (5nm)/Zr-N(10nm) barrier tolerates annealing at 700°C for 1 h without any breaking and agglomerating Cu film. This interpretes that insertion of a thin Zr layer into Zr-N film is attributed to the densification of grain boundaries in ZrN/Zr/ZrN films followed by the reduction of fast diffusion of Cu through ZrN /Zr/ ZrN multilayered films.

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