Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization

Jun Beom Kim; Soo-Hyun Kim; Won Seok Han; Do-Joong Lee

doi:10.1116/1.4951691

Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4951691 ◽

2016 ◽

Vol 34 (4) ◽

pp. 041504 ◽

Cited By ~ 6

Author(s):

Jun Beom Kim ◽

Soo-Hyun Kim ◽

Won Seok Han ◽

Do-Joong Lee

Keyword(s):

Thin Films ◽

Diffusion Barrier ◽

Atomic Layer ◽

Tungsten Carbides ◽

Metal Gate ◽

Cu Metallization ◽

And Diffusion

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Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti–Si–N thin films

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2198846 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1327 ◽

Cited By ~ 16

Author(s):

Jin-Seong Park ◽

Sang-Won Kang ◽

H. Kim

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Growth Mechanism ◽

Diffusion Barrier ◽

Atomic Layer ◽

Barrier Property ◽

Layer Deposition ◽

And Diffusion

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The growth and diffusion barrier properties of atomic layer deposited NbNx thin films

Thin Solid Films ◽

10.1016/j.tsf.2005.06.015 ◽

2005 ◽

Vol 491 (1-2) ◽

pp. 235-241 ◽

Cited By ~ 38

Author(s):

Petra Alén ◽

Mikko Ritala ◽

Kai Arstila ◽

Juhani Keinonen ◽

Markku Leskelä

Keyword(s):

Thin Films ◽

Diffusion Barrier ◽

Atomic Layer ◽

Barrier Properties ◽

And Diffusion

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Highly Conformal Amorphous W–Si–N Thin Films by Plasma-Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization

The Journal of Physical Chemistry C ◽

10.1021/jp510226g ◽

2015 ◽

Vol 119 (3) ◽

pp. 1548-1556 ◽

Cited By ~ 9

Author(s):

Tae Eun Hong ◽

Jae-Hun Jung ◽

Seungmin Yeo ◽

Taehoon Cheon ◽

So Ik Bae ◽

...

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Diffusion Barrier ◽

Atomic Layer ◽

Cu Metallization ◽

Layer Deposition

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TiN Diffusion Barrier Grown by Atomic Layer Deposition Method for Cu Metallization

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.4657 ◽

2001 ◽

Vol 40 (Part 1, No. 7) ◽

pp. 4657-4660 ◽

Cited By ~ 28

Author(s):

Jangwoong Uhm ◽

Hyeongtag Jeon

Keyword(s):

Atomic Layer Deposition ◽

Diffusion Barrier ◽

Atomic Layer ◽

Deposition Method ◽

Cu Metallization ◽

Layer Deposition ◽

Atomic Layer Deposition Method ◽

Tin Diffusion Barrier

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Diffusion Barrier Characteristics of Hf(C,N) Thin Films Deposited by Plasma Enhanced Metal Organic Chemical Vapor Deposition for Cu Metallization

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.l406 ◽

1998 ◽

Vol 37 (Part 2, No. 4A) ◽

pp. L406-L408 ◽

Cited By ~ 8

Author(s):

Woo-Cheol Roh ◽

Donggeun Jung

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Diffusion Barrier ◽

Vapor Deposition ◽

Chemical Vapor ◽

Organic Chemical ◽

Cu Metallization ◽

Metal Organic ◽

Organic Chemical Vapor Deposition

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Diffusion barrier properties of atomic layer deposited iridium thin films on the Cu/Ir/Si structure

10th IEEE International Conference on Nanotechnology ◽

10.1109/nano.2010.5697930 ◽

2010 ◽

Author(s):

Yong Hwan Lim ◽

Hana Yoo ◽

Bum Ho Choi ◽

Jong Ho Lee ◽

Ho-Nyun Lee ◽

...

Keyword(s):

Thin Films ◽

Diffusion Barrier ◽

Atomic Layer ◽

Barrier Properties

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Ru-Si-N Thin Films Prepared by Plasma Enhanced Atomic Layer Deposition as a Diffusion Barrier of Direct Plating of Cu

ECS Meeting Abstracts ◽

10.1149/ma2009-02/23/2040 ◽

2009 ◽

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Diffusion Barrier ◽

Atomic Layer ◽

Direct Plating ◽

Layer Deposition

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Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization

Applied Physics Letters ◽

10.1063/1.1585111 ◽

2003 ◽

Vol 82 (25) ◽

pp. 4486-4488 ◽

Cited By ~ 35

Author(s):

Soo-Hyun Kim ◽

Su Suk Oh ◽

Ki-Bum Kim ◽

Dae-Hwan Kang ◽

Wei-Min Li ◽

...

Keyword(s):

Thin Films ◽

Diffusion Barrier ◽

Atomic Layer ◽

Copper Metallization

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Properties of plasma-enhanced atomic layer deposited TiCx films as a diffusion barrier for Cu metallization

Thin Solid Films ◽

10.1016/j.tsf.2015.05.033 ◽

2015 ◽

Vol 590 ◽

pp. 311-317 ◽

Cited By ~ 3

Author(s):

Sang-Kyung Choi ◽

Hangil Kim ◽

Junbeam Kim ◽

Taehoon Cheon ◽

Jong Hyun Seo ◽

...

Keyword(s):

Diffusion Barrier ◽

Atomic Layer ◽

Cu Metallization

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Atomic layer deposited Mo2N thin films using Mo(CO)6 and NH3 plasma as a Cu diffusion barrier

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2020.158314 ◽

2021 ◽

Vol 858 ◽

pp. 158314

Author(s):

Yong-Hwan Joo ◽

Dip K. Nandi ◽

Rahul Ramesh ◽

Yujin Jang ◽

Jong-Seong Bae ◽

...

Keyword(s):

Thin Films ◽

Diffusion Barrier ◽

Atomic Layer ◽

Cu Diffusion Barrier

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