Application of a Semi‐insulating Amorphous Hydrogenated Silicon Nitride Film as a Resistive Field Shield and Its Reliability

1998 ◽  
Vol 145 (12) ◽  
pp. 4296-4304 ◽  
Author(s):  
K. Matsuzaki ◽  
T. Horasawa ◽  
G. Tada ◽  
M. Saga
Keyword(s):  
Silicon Nitride ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

Plasma Nitridation of Hydrogenated Silicon Nitride Film

2012 ◽  
Vol 51 (1) ◽  
pp. 01AJ09
Author(s):  
Chiung-Wei Lin ◽  
Ming-Hsien Yang ◽  
Yeong-Shyang Lee
Keyword(s):  
Silicon Nitride ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Hydrogenated Silicon ◽  
Plasma Nitridation

scholarly journals Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Kirill O. Bugaev ◽  
Anastasia A. Zelenina ◽  
Vladimir A. Volodin
Keyword(s):  
Silicon Nitride ◽  
Pulse Laser ◽  
Hydrogen Concentration ◽  
Laser Annealing ◽  
Chemical Species ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Hydrogenated Silicon ◽  
Laser Treatments ◽  
Nanosecond Pulse Laser

Vibrational properties of hydrogenated silicon-rich nitride () of various stoichiometry () and hydrogenated amorphous silicon () films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

A 29Si-NMR Investigation of Amorphous Hydrogenated Silicon Nitride

1986 ◽  
Vol 70 ◽  
Author(s):  
Mark A. Petrich ◽  
Rhett E. Livengood ◽  
Jeffrey A. Reimer ◽  
Dennis W. Hess
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Silicon Nitride ◽  
Solid State ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nitride Film ◽  
29Si Nmr ◽  
Hydrogen Atoms ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

ABSTRACTWe present the results of a spectroscopic study of amorphous hydrogenated silicon nitride. The nitride was prepared by plasma enhanced chemical vapor deposition and was studied with infrared absorption (IR) and solid-state nuclear magnetic resonance (NMR) spectroscopies. This nitride film shows a particularly interesting distribution of hydrogen: hydrogen atoms are nearly exclusively bound to nitrogen.

Network compaction and surface deformation in the hydrogenated silicon nitride film upon soft x-ray/VUV illumination

2006 ◽  
Vol 74 (4) ◽  
Author(s):  
Mohammed H. Modi ◽  
G. S. Lodha ◽  
P. Srivastava ◽  
A. K. Sinha ◽  
R. V. Nandedkar
Keyword(s):  
Silicon Nitride ◽  
Surface Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Hydrogenated Silicon ◽  
X Ray

Plasma Nitridation of Hydrogenated Silicon Nitride Film

2012 ◽  
Vol 51 (1S) ◽  
pp. 01AJ09
Author(s):  
Chiung-Wei Lin ◽  
Ming-Hsien Yang ◽  
Yeong-Shyang Lee
Keyword(s):  
Silicon Nitride ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Hydrogenated Silicon ◽  
Plasma Nitridation

scholarly journals Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes

1996 ◽  
Vol 43 (9) ◽  
pp. 1592-1601 ◽  
Author(s):  
S.J. Bijlsma ◽  
H. van Kranenburg ◽  
K.J.B.M. Nieuwesteeg ◽  
M.G. Pitt ◽  
J.F. Verweij
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Electrical Breakdown ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon
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