Publisher's Note: Network compaction and surface deformation in the hydrogenated silicon nitride film upon soft x-ray/VUV illumination [Phys. Rev. B74, 045326 (2006)]

2006 ◽  
Vol 74 (8) ◽  
Author(s):  
Mohammed H. Modi ◽  
G. S. Lodha ◽  
P. Srivastava ◽  
A. K. Sinha ◽  
R. V. Nandedkar
Keyword(s):  
Silicon Nitride ◽  
Surface Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Hydrogenated Silicon ◽  
X Ray

Network compaction and surface deformation in the hydrogenated silicon nitride film upon soft x-ray/VUV illumination

2006 ◽  
Vol 74 (4) ◽  
Author(s):  
Mohammed H. Modi ◽  
G. S. Lodha ◽  
P. Srivastava ◽  
A. K. Sinha ◽  
R. V. Nandedkar
Keyword(s):  
Silicon Nitride ◽  
Surface Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Hydrogenated Silicon ◽  
X Ray

Plasma Nitridation of Hydrogenated Silicon Nitride Film

2012 ◽  
Vol 51 (1) ◽  
pp. 01AJ09
Author(s):  
Chiung-Wei Lin ◽  
Ming-Hsien Yang ◽  
Yeong-Shyang Lee
Keyword(s):  
Silicon Nitride ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Hydrogenated Silicon ◽  
Plasma Nitridation

scholarly journals Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Kirill O. Bugaev ◽  
Anastasia A. Zelenina ◽  
Vladimir A. Volodin
Keyword(s):  
Silicon Nitride ◽  
Pulse Laser ◽  
Hydrogen Concentration ◽  
Laser Annealing ◽  
Chemical Species ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Hydrogenated Silicon ◽  
Laser Treatments ◽  
Nanosecond Pulse Laser

Vibrational properties of hydrogenated silicon-rich nitride () of various stoichiometry () and hydrogenated amorphous silicon () films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

Plasma Deposited Silicon Nitride Film Chemistry

1989 ◽  
Vol 165 ◽  
Author(s):  
Justin N. Chiang ◽  
Dennis W. Hess
Keyword(s):  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
Chemical Structure ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Gas Composition ◽  
Stainless Steel Mesh ◽  
Film Composition ◽  
X Ray ◽  
Silicon Nitride Films

AbstractThe structure and composition of plasma deposited (PD) silicon nitride thin films formed using NH3/SiH4, N2/SiH4, and N2/SiH4/H2, discharges are compared. The effect of introducing a DC grounded stainless steel mesh between the parallel electrodes is also discussed. Chemical structure and composition of these films are measured using X-ray Photoelectron Spectroscopy and Fourier Transform Infrared Spectroscopy. Significant changes in film composition are observed with changes in gas composition and with utilization of the screen. When the screen is invoked, variations in film composition are more pronounced for PD silicon nitride films formed using N2 as the nitrogen source. An increase in the N:Si ratio occurs for all films deposited using the screen. This compositional change is reflected in increased N-H and decreased Si-H bonding. Similar changes are also observed in films deposited from a N2/SiH4/H2 discharge compared to films formed using a N2/SiH4 discharge.

Plasma Nitridation of Hydrogenated Silicon Nitride Film

2012 ◽  
Vol 51 (1S) ◽  
pp. 01AJ09
Author(s):  
Chiung-Wei Lin ◽  
Ming-Hsien Yang ◽  
Yeong-Shyang Lee
Keyword(s):  
Silicon Nitride ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Hydrogenated Silicon ◽  
Plasma Nitridation
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