Calculation of Gas Spectra for Quantitative Fourier Transform Infrared Spectroscopy of Chemical Vapor Deposition

1998 ◽  
Vol 145 (9) ◽  
pp. 3212-3219 ◽  
Author(s):  
Philip W. Morrison ◽  
Oranut Taweechokesupsin
Keyword(s):  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Fourier Transform Infrared Spectroscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fourier Transform Infrared

Initial Stage of Cvd Copper Deposition on Teos Oxide

1995 ◽  
Vol 403 ◽  
Author(s):  
Tue Nguyen ◽  
Shusheng He ◽  
Lawrence J. Charnesky
Keyword(s):  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Fourier Transform Infrared Spectroscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fourier Transform Infrared ◽  
Copper Deposition ◽  
Selective Deposition ◽  
Initial Stage

AbstractSelective deposition of copper on metal (such as TiN) versus dielectric (such as oxide) requires understanding of the mechanism of chemical-vapor-deposition copper deposition. This work studies the initial stage of CVD copper deposition with hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (Cu-hfac-tmvs) precursor on tetraethylorthosilicate (TEOS) oxide using Fourier transform infrared spectroscopy (FTIR).

Fourier Transform Infrared Spectroscopic Study of Boron-Doped Micro/Nano/Ultrananocrystalline Diamond Prepared by Chemical Vapor Deposition

2014 ◽  
Vol 802 ◽  
pp. 140-145 ◽  
Author(s):  
Tatiane M. Arantes ◽  
Nazir M. Santos ◽  
Adriana F. Azevedo ◽  
Mauricio R. Baldan ◽  
Neidenei G. Ferreira
Keyword(s):  
Fourier Transform ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Fourier Transform Infrared ◽  
Gas Mixture ◽  
Infrared Spectroscopic Study ◽  
Boron Doped Diamond ◽  
Boron Doped

Boron-doped diamond (BDD) films were grown with different grain sizes. The films were deposited on silicon substrate after a suitable pre-treatment in a hot filament assisted by chemical vapor deposition (CVD) reactor in Ar/H2/CH4gas mixtures. The addition of argon to the growth gas mixture clearly revealed the transition from nanocrystalline (BDND) to ultrananocrystalline (BDUND) diamond films. Raman spectroscopy results of BDD, BDND and BDUND exhibited a good quality diamond films considering the diamond defined peak. Fourier Transform Infrared Spectroscopy (FTIR) spectra indicated carbonyl groups and B-C in BDND and BDUND films, while the microcrystalline BDD films showed only C-H bonds and boron-carbon (B-C), without the presence of oxygen and unsaturated species. Therefore, the carbonyl presence in the nanocrystalline films is mainly due to oxidation of transpolyacetylene present at the film grain boundaries. The transition became pronounced in the gas mixture with 60% of Ar, and the microcrystalline films were totally transformed in nanocrystalline diamond at 70% of Ar.

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