Investigation of SiO2 plasma enhanced chemical vapor deposition through tetraethoxysilane using attenuated total reflection Fourier transform infrared spectroscopy

1995 ◽  
Vol 13 (5) ◽  
pp. 2355-2367 ◽  
Author(s):  
Shashank C. Deshmukh ◽  
Eray S. Aydil
Keyword(s):  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Fourier Transform Infrared Spectroscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fourier Transform Infrared ◽  
Total Reflection ◽  
Attenuated Total Reflection

Initial Stage of Cvd Copper Deposition on Teos Oxide

1995 ◽  
Vol 403 ◽  
Author(s):  
Tue Nguyen ◽  
Shusheng He ◽  
Lawrence J. Charnesky
Keyword(s):  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Fourier Transform Infrared Spectroscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fourier Transform Infrared ◽  
Copper Deposition ◽  
Selective Deposition ◽  
Initial Stage

AbstractSelective deposition of copper on metal (such as TiN) versus dielectric (such as oxide) requires understanding of the mechanism of chemical-vapor-deposition copper deposition. This work studies the initial stage of CVD copper deposition with hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (Cu-hfac-tmvs) precursor on tetraethylorthosilicate (TEOS) oxide using Fourier transform infrared spectroscopy (FTIR).

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