Effect of Surface Iron on Photoconductivity Carrier Recombination Lifetime of p‐Type Silicon

1998 ◽  
Vol 145 (5) ◽  
pp. 1724-1729 ◽  
Author(s):  
Heungsoo Park ◽  
C. R. Helms ◽  
Daehong Ko
Keyword(s):  
Recombination Lifetime ◽  
Type Silicon ◽  
Carrier Recombination ◽  
Surface Iron ◽  
P Type ◽  
Effect Of Surface

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Effect of Surface Preparations on Electrical and Chemical Surface Properties of P‐Type Silicon

1990 ◽  
Vol 137 (9) ◽  
pp. 2966-2973 ◽  
Author(s):  
P. de Mierry ◽  
D. Ballutaud ◽  
M. Aucouturier ◽  
A. Etcheberry
Keyword(s):  
Surface Properties ◽  
Chemical Surface ◽  
Type Silicon ◽  
P Type ◽  
Effect Of Surface

Introduction of Electrical Defects in P-Type Silicon due to Electron-Beam and RF Sputtering Metallization Processes

1983 ◽  
Vol 25 ◽  
Author(s):  
O. Paz ◽  
F. D. Auret
Keyword(s):  
Electron Beam ◽  
Deep Level ◽  
Rf Sputtering ◽  
Electron Beam Evaporation ◽  
Defect States ◽  
Type Silicon ◽  
Carrier Recombination ◽  
Electron Beam Induced Current ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTDefects introduced in p-type silicon during RF sputter deposition of Ti-W and electron-beam evaporation of hafnium were investigated using I-V, deep level transient spectroscopy and electron-beam induced current techniques. DLTS measurements indicate the presence of several deposition and evaporation induced defect states. H(0.35) at EV + .35 eV and H(0.38) were the most prominent defects. Minority carrier diffusion length results taken after annealing showed that in the case of the Hf contacts the damage was annealed out while in the case of Ti-W it was not. These differences in carrier recombination are traced to the concentration of H(0.35). Sputtering or evaporation induced damage also increased the barrier height. This observed increase was modeled assuming the introduction of donor-like defects.

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type

Light Effects on Grain Boundary Properties in Silicon

1981 ◽  
Vol 5 ◽  
Author(s):  
L. J. Cheng ◽  
C. M. Shyu
Keyword(s):  
Experimental Data ◽  
Grain Boundary ◽  
Minority Carrier ◽  
State Density ◽  
Boundary State ◽  
Carrier Recombination ◽  
Boundary Properties ◽  
Light Effects ◽  
Recombination Velocity ◽  
P Type

ABSTRACTWe have studied the photoconductivity of grain boundaries in p–type silicon. The result demonstrates the applicability of the technique for the measurement of minority carrier recombination velocity at the grain boundary. The experimental data are consistent with the thought that the recombination velocity increases with the boundary state density and light intensity.

Sign in / Sign up

Export Citation Format

Share Document