EFFECT OF SURFACE SCATTERING ON ELECTRON MOBILITY IN AN INVERSION LAYER ON p‐TYPE SILICON

1964 ◽  
Vol 4 (8) ◽  
pp. 145-147 ◽  
Author(s):  
F. Fang ◽  
S. Triebwasser
Keyword(s):  
Electron Mobility ◽  
Inversion Layer ◽  
Surface Scattering ◽  
Type Silicon ◽  
P Type ◽  
Effect Of Surface

Effect of Surface Preparations on Electrical and Chemical Surface Properties of P‐Type Silicon

1990 ◽  
Vol 137 (9) ◽  
pp. 2966-2973 ◽  
Author(s):  
P. de Mierry ◽  
D. Ballutaud ◽  
M. Aucouturier ◽  
A. Etcheberry
Keyword(s):  
Surface Properties ◽  
Chemical Surface ◽  
Type Silicon ◽  
P Type ◽  
Effect Of Surface

Valley splitting in an n-channel (100) inversion layer on p-type silicon

1976 ◽  
Vol 58 (1) ◽  
pp. 254-260 ◽  
Author(s):  
Fusayoshi J. Ohkawa ◽  
Yasutada Uemura
Keyword(s):  
Inversion Layer ◽  
Valley Splitting ◽  
Type Silicon ◽  
P Type

The Lateral Photovoltaic Effect in the Fe/SiO2/ Si Structure with Different Silicon Conductivity Type

2018 ◽  
Vol 386 ◽  
pp. 137-142
Author(s):  
Tatiana A. Pisarenko ◽  
Vyacheslav V. Balashev ◽  
Vladimir V. Korobtsov ◽  
Artem A. Dimitriev ◽  
Victor A. Vikulov
Keyword(s):  
Response Time ◽  
Opposite Direction ◽  
Photovoltaic Effect ◽  
Inversion Layer ◽  
Light Spot ◽  
Electrical Field ◽  
Type Silicon ◽  
Conductivity Type ◽  
P Type

We report on the results of the study of the lateral photovoltaic effect in the Fe/SiO2/Si structures with n-and p-type silicon. It is found that in both cases the photovoltage signal varies linearly when the light spot moves between the electrodes. It is established that the sensitivity of lateral photovoltaic effect in Fe/SiO2/n-Si and Fe/SiO2/р-Si structures is 32.3 and 14.7 mV/mm, respectively. When the silicon conductivity type changes, there is an inversion of photovoltage polarity as a result of the opposite direction of the built-in electrical field at the SiO2/Si interface. It was found that the response time in the Fe/SiO2/n-Si structure is 4.2 times faster than in the Fe/SiO2/p-Si structure due to the presence of an inversion layer in this structure.

Electron Mobility and Drag Effect in p-Type Silicon

1985 ◽  
Vol 24 (Part 1, No. 6) ◽  
pp. 732-736 ◽  
Author(s):  
Makoto Morohashi ◽  
Nobuhiko Sawaki ◽  
Isamu Akasaki
Keyword(s):  
Electron Mobility ◽  
Drag Effect ◽  
Type Silicon ◽  
P Type

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type
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