On‐Chip Decoupling Capacitance with High Dielectric Constant and Strength Using SrTiO3 Thin Films Electron‐Cyclotron‐Resonance‐Sputtered at 400°C

1997 ◽  
Vol 144 (12) ◽  
pp. 4321-4325 ◽  
Author(s):  
Manabu Itsumi ◽  
Shin‐ichi Ohfuji ◽  
Mitsuo Tsukada ◽  
Hideo Akiya
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
High Dielectric Constant ◽  
Electron Cyclotron ◽  
On Chip ◽  
High Dielectric

Magneto-Optic Studies of GaN Films and GaN/AlGaN Heterostructures

1995 ◽  
Vol 395 ◽  
Author(s):  
Y.J. Wang ◽  
H.K. Ng ◽  
R. Kaplan ◽  
K. Doverspike ◽  
D.K. Gaskill ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Binding Energy ◽  
Free Electron ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Low Frequency ◽  
Electron Cyclotron ◽  
Si Doped

ABSTRACTMagneto-studies have been carried out for several MOCVD grown GaN thin films and GaN/AlGaN heterostructures at magnetic fields up to 30 T and at temperatures between 4.2 K to 100 K. Electron cyclotron resonance was observed in two heterostructures with high mobilities (μ > 2000 cm2/V-s), the effective mass obtained from the cyclotron resonance measurement is 0.23±0.01 m0, where m0 is the mass of free electron. For Si-doped thin film GaN there was no sign of electron cyclotron resonance even when samples were heated up to 100 K. However, a Is to 2p+ absorption line was observed for Si-doped GaN samples. A binding energy of 29 meV and low frequency dielectric constant of 10.4 is obtained.

scholarly journals STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW

2013 ◽  
Vol 22 ◽  
pp. 564-569
Author(s):  
KANTA RATHEE ◽  
B. P. MALIK
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Structural And Electrical Properties ◽  
High Dielectric ◽  
Deposited Films

Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of suitable metal oxide with high dielectric constant is not sufficient to overcome the scaling challenges. The various deposition techniques and the conditions under which the thin films are deposited plays important role in deciding the structural and electrical properties of the deposited films. This paper discusses in brief the various deposition conditions which are employed to improve the structural and electrical properties of the deposited films.

Sign in / Sign up

Export Citation Format

Share Document