A Comparative Study of n+/p Junction Formation for Deep Submicron Elevated Source/Drain Metal Oxide Semiconductor Field Effect Transistors

J. Sun; R. F. Bartholomew; K. Bellur; A. Srivastava; C. M. Osburn; N. A. Masnari; R. Westhoff

doi:10.1149/1.1838066

A Comparative Study of n+/p Junction Formation for Deep Submicron Elevated Source/Drain Metal Oxide Semiconductor Field Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1838066 ◽

1997 ◽

Vol 144 (10) ◽

pp. 3659-3664 ◽

Cited By ~ 5

Author(s):

J. Sun ◽

R. F. Bartholomew ◽

K. Bellur ◽

A. Srivastava ◽

C. M. Osburn ◽

...

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Junction Formation ◽

Elevated Source

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Parasitic Resistance Considerations of Using Elevated Source/Drain Technology for Deep Submicron Metal Oxide Semiconductor Field Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1838607 ◽

1998 ◽

Vol 145 (6) ◽

pp. 2131-2137 ◽

Cited By ~ 4

Author(s):

J. Sun ◽

R. F. Bartholomew ◽

K. Bellur ◽

A. Srivastava ◽

C. M. Osburn ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Parasitic Resistance ◽

Elevated Source

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Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs)

Chinese Physics ◽

10.1088/1009-1963/16/7/052 ◽

2007 ◽

Vol 16 (7) ◽

pp. 2111-2115 ◽

Cited By ~ 3

Author(s):

Liu Hong-Xia ◽

Hao Yue

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Hot Carriers ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability

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Transient characteristics of back-gated multilayer MoS2 and WSe2 channel n-type metal oxide semiconductor field effect transistors: A comparative study

Journal of Applied Physics ◽

10.1063/1.5116627 ◽

2019 ◽

Vol 126 (19) ◽

pp. 194501

Author(s):

Hui Shen ◽

Sitong Bu ◽

Daming Huang

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Transient Characteristics

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Effects of Hot Carriers on DC and RF Performances of Deep Submicron p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Various Oxide Layer Thicknesses

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2633 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2633-2635 ◽

Cited By ~ 2

Author(s):

Mao-Chyuan Tang ◽

Yean-Kuen Fang ◽

Wen-Shiang Liao ◽

David C. Chen ◽

Chune-Sin Yeh ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carriers ◽

Rf Performances

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New properties and applications of electron‐beam evaporated silicon in submicron elevated source/drain metal‐oxide‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.113014 ◽

1994 ◽

Vol 65 (6) ◽

pp. 728-730

Author(s):

Mohammad R. Mirabedini ◽

Scott H. Goodwin‐Johansson ◽

Hisham Z. Massoud

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Elevated Source

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Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.362953 ◽

1996 ◽

Vol 80 (3) ◽

pp. 1567-1577 ◽

Cited By ~ 381

Author(s):

Shin‐ichi Takagi ◽

Judy L. Hoyt ◽

Jeffrey J. Welser ◽

James F. Gibbons

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Limited Mobility

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Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-kand SiO2Gate Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2369 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2369-2374 ◽

Cited By ~ 16

Author(s):

Koji Eriguchi ◽

Masayuki Kamei ◽

Daisuke Hamada ◽

Kenji Okada ◽

Kouichi Ono

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Plasma Source ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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A Comparative study of radiation doses and treatment area dependence in thermoluminescence dosimetry systems and metal oxide semiconductor field effect transistors

Journal of Turgut Ozal Medical Center ◽

10.7247/jtomc.2014.1764 ◽

2015 ◽

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Radiation Doses ◽

Treatment Area ◽

Thermoluminescence Dosimetry

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Comparative study of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide

Solid-State Electronics ◽

10.1016/j.sse.2011.04.017 ◽

2011 ◽

Vol 62 (1) ◽

pp. 152-155 ◽

Cited By ~ 29

Author(s):

Eiji Miyazaki ◽

Yuji Goda ◽

Shigeru Kishimoto ◽

Takashi Mizutani

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Inverse Modeling as a Basis for Predictive Device Simulation of Deep Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.5437 ◽

1998 ◽

Vol 37 (Part 1, No. 10) ◽

pp. 5437-5443 ◽

Cited By ~ 6

Author(s):

Hiroshi Goto ◽

Seiichiro Yamaguchi ◽

Christoph Jungemann

Keyword(s):

Metal Oxide ◽

Inverse Modeling ◽

Field Effect ◽

Field Effect Transistors ◽

Device Simulation ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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