Transient characteristics of back-gated multilayer MoS2 and WSe2 channel n-type metal oxide semiconductor field effect transistors: A comparative study

Hui Shen; Sitong Bu; Daming Huang

doi:10.1063/1.5116627

Transient characteristics of back-gated multilayer MoS2 and WSe2 channel n-type metal oxide semiconductor field effect transistors: A comparative study

Journal of Applied Physics ◽

10.1063/1.5116627 ◽

2019 ◽

Vol 126 (19) ◽

pp. 194501

Author(s):

Hui Shen ◽

Sitong Bu ◽

Daming Huang

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Transient Characteristics

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Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.362953 ◽

1996 ◽

Vol 80 (3) ◽

pp. 1567-1577 ◽

Cited By ~ 381

Author(s):

Shin‐ichi Takagi ◽

Judy L. Hoyt ◽

Jeffrey J. Welser ◽

James F. Gibbons

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Limited Mobility

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A Comparative Study of n+/p Junction Formation for Deep Submicron Elevated Source/Drain Metal Oxide Semiconductor Field Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1838066 ◽

1997 ◽

Vol 144 (10) ◽

pp. 3659-3664 ◽

Cited By ~ 5

Author(s):

J. Sun ◽

R. F. Bartholomew ◽

K. Bellur ◽

A. Srivastava ◽

C. M. Osburn ◽

...

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Junction Formation ◽

Elevated Source

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Effects of nitrogen-incorporated interface layer on the transient characteristics of hafnium oxide n-metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1890479 ◽

2005 ◽

Vol 86 (12) ◽

pp. 123506 ◽

Cited By ~ 2

Author(s):

Chang Yong Kang ◽

Se Jong Rhee ◽

Chang Hwan Choi ◽

Chang Seok Kang ◽

Rino Choi ◽

...

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Transient Characteristics

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Comparative Study of Plasma Source-Dependent Charging Polarity in Metal–Oxide–Semiconductor Field Effect Transistors with High-kand SiO2Gate Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2369 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2369-2374 ◽

Cited By ~ 16

Author(s):

Koji Eriguchi ◽

Masayuki Kamei ◽

Daisuke Hamada ◽

Kenji Okada ◽

Kouichi Ono

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Plasma Source ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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A Comparative study of radiation doses and treatment area dependence in thermoluminescence dosimetry systems and metal oxide semiconductor field effect transistors

Journal of Turgut Ozal Medical Center ◽

10.7247/jtomc.2014.1764 ◽

2015 ◽

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Radiation Doses ◽

Treatment Area ◽

Thermoluminescence Dosimetry

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Comparative study of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide

Solid-State Electronics ◽

10.1016/j.sse.2011.04.017 ◽

2011 ◽

Vol 62 (1) ◽

pp. 152-155 ◽

Cited By ~ 29

Author(s):

Eiji Miyazaki ◽

Yuji Goda ◽

Shigeru Kishimoto ◽

Takashi Mizutani

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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Comparative Study of Plasma-Charging Damage in High-$k$ Dielectric and p–n Junction and Their Effects on Off-State Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.08kd05 ◽

2011 ◽

Vol 50 (8) ◽

pp. 08KD05 ◽

Cited By ~ 1

Author(s):

Masayuki Kamei ◽

Yoshinori Takao ◽

Koji Eriguchi ◽

Kouichi Ono

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K ◽

High K Dielectric

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Comparative Study of Plasma-Charging Damage in High-kDielectric and p–n Junction and Their Effects on Off-State Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.08kd05 ◽

2011 ◽

Vol 50 (8S2) ◽

pp. 08KD05 ◽

Cited By ~ 1

Author(s):

Masayuki Kamei ◽

Yoshinori Takao ◽

Koji Eriguchi ◽

Kouichi Ono

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Comparative Study of Tunneling Field-Effect Transistors and Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dj12 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DJ12 ◽

Cited By ~ 19

Author(s):

Woo Young Choi

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tunneling Field Effect Transistors

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Comparative study of self-aligned and nonself-aligned SiGe p-metal–oxide–semiconductor modulation-doped field effect transistors with nanometer gate lengths

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1321286 ◽

2000 ◽

Vol 18 (6) ◽

pp. 3488 ◽

Cited By ~ 5

Author(s):

Wu Lu ◽

Steven J. Koester ◽

Xie-Wen Wang ◽

Jack O. Chu ◽

Tso-Ping Ma ◽

...

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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