Parasitic Resistance Considerations of Using Elevated Source/Drain Technology for Deep Submicron Metal Oxide Semiconductor Field Effect Transistors

J. Sun; R. F. Bartholomew; K. Bellur; A. Srivastava; C. M. Osburn; N. A. Masnari; R. Westhoff

doi:10.1149/1.1838607

Parasitic Resistance Considerations of Using Elevated Source/Drain Technology for Deep Submicron Metal Oxide Semiconductor Field Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1838607 ◽

1998 ◽

Vol 145 (6) ◽

pp. 2131-2137 ◽

Cited By ~ 4

Author(s):

J. Sun ◽

R. F. Bartholomew ◽

K. Bellur ◽

A. Srivastava ◽

C. M. Osburn ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Parasitic Resistance ◽

Elevated Source

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A Comparative Study of n+/p Junction Formation for Deep Submicron Elevated Source/Drain Metal Oxide Semiconductor Field Effect Transistors

Journal of The Electrochemical Society ◽

10.1149/1.1838066 ◽

1997 ◽

Vol 144 (10) ◽

pp. 3659-3664 ◽

Cited By ~ 5

Author(s):

J. Sun ◽

R. F. Bartholomew ◽

K. Bellur ◽

A. Srivastava ◽

C. M. Osburn ◽

...

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Junction Formation ◽

Elevated Source

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Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs)

Chinese Physics ◽

10.1088/1009-1963/16/7/052 ◽

2007 ◽

Vol 16 (7) ◽

pp. 2111-2115 ◽

Cited By ~ 3

Author(s):

Liu Hong-Xia ◽

Hao Yue

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Hot Carriers ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability

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Effects of Hot Carriers on DC and RF Performances of Deep Submicron p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Various Oxide Layer Thicknesses

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2633 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2633-2635 ◽

Cited By ~ 2

Author(s):

Mao-Chyuan Tang ◽

Yean-Kuen Fang ◽

Wen-Shiang Liao ◽

David C. Chen ◽

Chune-Sin Yeh ◽

...

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carriers ◽

Rf Performances

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New properties and applications of electron‐beam evaporated silicon in submicron elevated source/drain metal‐oxide‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.113014 ◽

1994 ◽

Vol 65 (6) ◽

pp. 728-730

Author(s):

Mohammad R. Mirabedini ◽

Scott H. Goodwin‐Johansson ◽

Hisham Z. Massoud

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Elevated Source

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Inverse Modeling as a Basis for Predictive Device Simulation of Deep Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.5437 ◽

1998 ◽

Vol 37 (Part 1, No. 10) ◽

pp. 5437-5443 ◽

Cited By ~ 6

Author(s):

Hiroshi Goto ◽

Seiichiro Yamaguchi ◽

Christoph Jungemann

Keyword(s):

Metal Oxide ◽

Inverse Modeling ◽

Field Effect ◽

Field Effect Transistors ◽

Device Simulation ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Low-frequency noise in deep-submicron metal–oxide–semiconductor field-effect transistors

IEE Proceedings - Circuits Devices and Systems ◽

10.1049/ip-cds:20020332 ◽

2002 ◽

Vol 149 (1) ◽

pp. 23-31 ◽

Cited By ~ 26

Author(s):

Z. Çelik-Butler

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise

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Influence of Source/Drain Parasitic Resistance on Device Performance of Ultrathin Body III–V Channel Metal–Oxide–Semiconductor Field-Effect Transistors

Applied Physics Express ◽

10.1143/apex.4.084301 ◽

2011 ◽

Vol 4 (8) ◽

pp. 084301 ◽

Cited By ~ 4

Author(s):

Yōsuke Maegawa ◽

Shunsuke Koba ◽

Hideaki Tsuchiya ◽

Matsuto Ogawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

Parasitic Resistance

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Impact of proton-radiation-induced spacer damage on the dc characteristics degradation in deep-submicron metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3106163 ◽

2009 ◽

Vol 105 (8) ◽

pp. 084505 ◽

Cited By ~ 9

Author(s):

Shoubin Xue ◽

Ru Huang ◽

Pengfei Wang ◽

Wenhua Wang ◽

Dake Wu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Proton Radiation ◽

Dc Characteristics ◽

Radiation Induced

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Characteristics of Deep Submicron Grooved-Gate P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.5893 ◽

2001 ◽

Vol 40 (Part 1, No. 10) ◽

pp. 5893-5899

Author(s):

Hongxia Ren ◽

Yue Hao ◽

Lei Xue

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Achieving low parasitic resistance in Ge p-channel metal–oxide–semiconductor field-effect transistors by ion implantation after germanidation

Applied Physics Express ◽

10.7567/apex.8.054201 ◽

2015 ◽

Vol 8 (5) ◽

pp. 054201 ◽

Cited By ~ 9

Author(s):

Wen Hsin Chang ◽

Hiroyuki Ota ◽

Tatsuro Maeda

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Parasitic Resistance

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