Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes

1997 ◽  
Vol 144 (4) ◽  
pp. 1417-1422 ◽  
Author(s):  
J. W. Lee ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
W. S. Hobson ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Diodes ◽  
Plasma Etch ◽  
Inductively Coupled

Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes

2017 ◽  
Vol 110 (14) ◽  
pp. 142101 ◽  
Author(s):  
Jiancheng Yang ◽  
Shihyun Ahn ◽  
F. Ren ◽  
Rohit Khanna ◽  
Kristen Bevlin ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Diodes ◽  
Plasma Etch ◽  
Inductively Coupled

Fabrication and repair of GaN nanorods by plasma etching with self-assembled nickel nanomasks

2021 ◽  
Author(s):  
Shiying Zhang ◽  
Lei Zhang ◽  
Yueyao Zhong ◽  
Guodong Wang ◽  
Qingjun Xu
Keyword(s):  
Inductively Coupled Plasma ◽  
Average Diameter ◽  
Etching Time ◽  
X Ray Diffraction ◽  
Plasma Etch ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Self Organized ◽  
Gan Film ◽  
Koh Etching

High crystal quality GaN nanorod arrays were fabricated by inductively coupled plasma (ICP) etching using self-organized nickel (Ni) nano-islands mask on GaN film and subsequent repaired process including annealing in ammonia and KOH etching. The Ni nano-islands have been formed by rapid thermal annealing, whose density, shape, and dimensions were regulated by annealing temperature and Ni layer thickness. The structural and optical properties of the nanorods obtained from GaN epitaxial layers were comparatively studied by high-resolution X-ray diffraction (HRXRD), Raman spectroscopy and photoluminescence (PL). The results indicate that damage induced by plasma can be successfully healed by annealing in NH3 at 900 °C. The average diameter of the as-etched nanorod was effectively reduced and the plasma etch damage was removed after a wet treatment process in a KOH solution. It was found that the diameter of the GaN nanorod was continuously reduced and the PL intensity first increased, then reduced and finally increased as the KOH etching time sequentially increased.

Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode

2009 ◽  
Vol 615-617 ◽  
pp. 663-666
Author(s):  
In Ho Kang ◽  
Wook Bahng ◽  
Sung Jae Joo ◽  
Sang Cheol Kim ◽  
Nam Kyun Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Diodes ◽  
Annealing Process ◽  
Activation Process ◽  
Electrical Characteristics ◽  
Inductively Coupled ◽  
Edge Termination ◽  
Post Annealing ◽  
Surface Damages ◽  
Dry Etch

The effects of post annealing etch process on electrical performances of a 4H-SiC Schottky diodes without any edge termination were investigated. The post etch was carried out using various dry the dry etch techniques such as Inductively Coupled Plasma (ICP) and Neutral Beam Etch (NBE) in order to eliminate suspicious surface damages occurring during a high temperature ion activation process. The leakage current of diodes treated by NBE measured at -100V was about one order lower than that of diode without post etch and a half times lower than that of diode treated by ICP without a significant degradation of forward electrical characteristics. Based on the above results, the post annealing process was adapted to a junction barrier Schottky diode with a field limiting ring. The blocking voltages of diode without post annealing etch and diodes treated by ICP and NBE were -1038V, -1125V, and -1595V, respectively.

Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations

2003 ◽  
Vol 42 (Part 1, No. 7A) ◽  
pp. 4207-4212 ◽  
Author(s):  
Chao-Yi Fang ◽  
Weng-Jung Huang ◽  
Edward Yi Chang ◽  
Chia-Feng Lin ◽  
Ming-Shiann Feng
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Contact ◽  
Plasma Etch ◽  
Inductively Coupled ◽  
Wet Etch

Real-time control of ion density and ion energy in chlorine inductively coupled plasma etch processing

2003 ◽  
Vol 21 (4) ◽  
pp. 1183-1187 ◽  
Author(s):  
Cheng-Hung Chang ◽  
Keh-Chyang Leou ◽  
Chaung Lin ◽  
Tsan-Lang Lin ◽  
Chih-Wei Tseng ◽  
...  
Keyword(s):  
Real Time ◽  
Inductively Coupled Plasma ◽  
Real Time Control ◽  
Plasma Etch ◽  
Ion Density ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Time Control
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