scholarly journals Degradation mechanism of Schottky diodes on inductively coupled plasma-etchedn-type 4H-SiC

2003 ◽  
Vol 94 (3) ◽  
pp. 1765-1768 ◽  
Author(s):  
Kyoung Jin Choi ◽  
Sang Youn Han ◽  
Jong-Lam Lee
Keyword(s):  
Inductively Coupled Plasma ◽  
Degradation Mechanism ◽  
Schottky Diodes ◽  
Inductively Coupled

Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode

2009 ◽  
Vol 615-617 ◽  
pp. 663-666
Author(s):  
In Ho Kang ◽  
Wook Bahng ◽  
Sung Jae Joo ◽  
Sang Cheol Kim ◽  
Nam Kyun Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Diodes ◽  
Annealing Process ◽  
Activation Process ◽  
Electrical Characteristics ◽  
Inductively Coupled ◽  
Edge Termination ◽  
Post Annealing ◽  
Surface Damages ◽  
Dry Etch

The effects of post annealing etch process on electrical performances of a 4H-SiC Schottky diodes without any edge termination were investigated. The post etch was carried out using various dry the dry etch techniques such as Inductively Coupled Plasma (ICP) and Neutral Beam Etch (NBE) in order to eliminate suspicious surface damages occurring during a high temperature ion activation process. The leakage current of diodes treated by NBE measured at -100V was about one order lower than that of diode without post etch and a half times lower than that of diode treated by ICP without a significant degradation of forward electrical characteristics. Based on the above results, the post annealing process was adapted to a junction barrier Schottky diode with a field limiting ring. The blocking voltages of diode without post annealing etch and diodes treated by ICP and NBE were -1038V, -1125V, and -1595V, respectively.

Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes

1997 ◽  
Vol 144 (4) ◽  
pp. 1417-1422 ◽  
Author(s):  
J. W. Lee ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
W. S. Hobson ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Diodes ◽  
Plasma Etch ◽  
Inductively Coupled

Inductively coupled plasma etch damage in (-201) Ga2O3 Schottky diodes

2017 ◽  
Vol 110 (14) ◽  
pp. 142101 ◽  
Author(s):  
Jiancheng Yang ◽  
Shihyun Ahn ◽  
F. Ren ◽  
Rohit Khanna ◽  
Kristen Bevlin ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Diodes ◽  
Plasma Etch ◽  
Inductively Coupled

High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges

1999 ◽  
Vol 595 ◽  
Author(s):  
A.P. Zhang ◽  
G. Dang ◽  
F. Ren ◽  
X.A. Cao ◽  
H. Cho ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
High Density ◽  
Plasma Damage ◽  
Source Power ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Self Bias ◽  
Density Plasma

AbstractThe effects of dc chuck self-bias and high density source power (which predominantly control ion energy and ion flux, respectively) on the electrical properties of n-GaN Schottky diodes exposed to Inductively Coupled Plasma of Cl2/Ar were examined. Both parameters were found to influence the diode performance, by reducing the reverse breakdown voltage and Schottky barrier height. All plasma conditions were found to produce a nitrogen-deficient surface, with a typical depth of the non-stoichiometry being ∼500 Å. Post-etch annealing was found to partially restore the diode characteristics.

scholarly journals High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges

2000 ◽  
Vol 5 (S1) ◽  
pp. 831-837
Author(s):  
A.P. Zhang ◽  
G. Dang ◽  
F. Ren ◽  
X.A. Cao ◽  
H. Cho ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
High Density ◽  
Plasma Damage ◽  
Source Power ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Self Bias ◽  
Density Plasma

The effects of dc chuck self-bias and high density source power (which predominantly control ion energy and ion flux, respectively) on the electrical properties of n-GaN Schottky diodes exposed to Inductively Coupled Plasma of Cl2/Ar were examined. Both parameters were found to influence the diode performance, by reducing the reverse breakdown voltage and Schottky barrier height. All plasma conditions were found to produce a nitrogen-deficient surface, with a typical depth of the non-stoichiometry being ∼ 500 Å. Post-etch annealing was found to partially restore the diode characteristics.

Inductively coupled plasma damage in GaN Schottky diodes

1999 ◽  
Vol 17 (4) ◽  
pp. 1540 ◽  
Author(s):  
X. A. Cao ◽  
A. P. Zhang ◽  
G. T. Dang ◽  
H. Cho ◽  
F. Ren ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Diodes ◽  
Plasma Damage ◽  
Inductively Coupled
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