Characterization of hydrogen silsesquioxane as a Cl[sub 2]∕BCl[sub 3] inductively coupled plasma etch mask for air-clad InP-based quantum well waveguide fabrication

2006 ◽  
Vol 24 (6) ◽  
pp. 3152 ◽  
Author(s):  
D. Park ◽  
T. H. Stievater ◽  
W. S. Rabinovich ◽  
N. Green ◽  
S. Kanakaraju ◽  
...  
Keyword(s):  
Quantum Well ◽  
Inductively Coupled Plasma ◽  
Hydrogen Silsesquioxane ◽  
Plasma Etch ◽  
Inductively Coupled ◽  
Waveguide Fabrication

scholarly journals Speciation of organometals using a synchronizing GC-EIMS and GC-ICPMS system for simultaneous detection

2014 ◽  
Vol 29 (6) ◽  
pp. 1132-1137 ◽  
Author(s):  
Lucia D'Ulivo ◽  
Lu Yang ◽  
Yong-Lai Feng ◽  
John Murimboh ◽  
Zoltán Mester
Keyword(s):  
Gas Chromatography ◽  
Mass Spectrometer ◽  
Inductively Coupled Plasma ◽  
Simultaneous Detection ◽  
Electron Ionization ◽  
Ionization Mass ◽  
Inductively Coupled

Accurate quantitation and characterization of organometals are successfully achieved by splitting the gas chromatography (GC) flow to both an electron ionization mass spectrometer (EIMS) and an inductively coupled plasma mass spectrometer (ICPMS).

Fabrication and repair of GaN nanorods by plasma etching with self-assembled nickel nanomasks

2021 ◽  
Author(s):  
Shiying Zhang ◽  
Lei Zhang ◽  
Yueyao Zhong ◽  
Guodong Wang ◽  
Qingjun Xu
Keyword(s):  
Inductively Coupled Plasma ◽  
Average Diameter ◽  
Etching Time ◽  
X Ray Diffraction ◽  
Plasma Etch ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Self Organized ◽  
Gan Film ◽  
Koh Etching

High crystal quality GaN nanorod arrays were fabricated by inductively coupled plasma (ICP) etching using self-organized nickel (Ni) nano-islands mask on GaN film and subsequent repaired process including annealing in ammonia and KOH etching. The Ni nano-islands have been formed by rapid thermal annealing, whose density, shape, and dimensions were regulated by annealing temperature and Ni layer thickness. The structural and optical properties of the nanorods obtained from GaN epitaxial layers were comparatively studied by high-resolution X-ray diffraction (HRXRD), Raman spectroscopy and photoluminescence (PL). The results indicate that damage induced by plasma can be successfully healed by annealing in NH3 at 900 °C. The average diameter of the as-etched nanorod was effectively reduced and the plasma etch damage was removed after a wet treatment process in a KOH solution. It was found that the diameter of the GaN nanorod was continuously reduced and the PL intensity first increased, then reduced and finally increased as the KOH etching time sequentially increased.

Geochemical Characterization of Lapita Pottery Via Inductively Coupled Plasma-mass Spectrometry (ICP-MS)

Archaeometry ◽  
2004 ◽  
Vol 46 (1) ◽  
pp. 35-46 ◽  
Author(s):  
D. J. Kennett ◽  
A. J. Anderson ◽  
M. J. Cruz ◽  
G. R. Clark ◽  
G. R. Summerhayes
Keyword(s):  
Mass Spectrometry ◽  
Inductively Coupled Plasma ◽  
Geochemical Characterization ◽  
Inductively Coupled ◽  
Icp Ms ◽  
Plasma Mass Spectrometry
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