Interpretation of Carrier Recombination Lifetime and Diffusion Length Measurements in Silicon

1996 ◽  
Vol 143 (4) ◽  
pp. 1399-1405 ◽  
Author(s):  
W. Murray Bullis ◽  
Howard R. Huff
Keyword(s):  
Diffusion Length ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
Length Measurements ◽  
And Diffusion

scholarly journals CONSIDERATION OF SURFACE RECOMBINATION WHEN MEASURING THE RECOMBINATION LIFETIME FROM THE PHOTOCONDUCTIVITY DECAY IN LARGE-THICKNESS SAMPLES

2020 ◽  
Author(s):  
Svetlana Kobeleva ◽  
Ivan Schemerov ◽  
Artem Sharapov ◽  
Sergey Yurchuk
Keyword(s):  
Diffusion Length ◽  
Decay Curve ◽  
Surface Recombination ◽  
Life Time ◽  
Free Carrier ◽  
Silicon Sample ◽  
Recombination Lifetime ◽  
Carrier Recombination ◽  
Photoconductivity Decay ◽  
Effective Life

Surface recombination strongly influence on the photoconductivity decay curve. In this work it was shown that usually defined using this curve the effective life time don’t achieve maxima value if silicon sample thickness exceeds six diffusion length. In this case well known formulas for calculation of free carrier recombination lifetime need to be adjusted.

scholarly journals Preparation and Characterization of Chitosan Binder-Based Electrode for Dye-Sensitized Solar Cells

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
En Mei Jin ◽  
Kyung-Hee Park ◽  
Ju-Young Park ◽  
Jae-Wook Lee ◽  
Soon-Ho Yim ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Solar Cells ◽  
Transit Time ◽  
Diffusion Length ◽  
Dye Sensitized Solar Cells ◽  
Electron Recombination ◽  
Recombination Lifetime ◽  
Dye Sensitized ◽  
Sensitized Solar Cells ◽  
And Diffusion

A chitosan binder-based TiO2photoelectrode is used in dye-sensitized solar cells (DSSCs). Field-emission scanning electron microscope (FE-SEM) images revealed that the grain size, thickness, and distribution of TiO2films are affected by the chitosan content. With addition of 2.0 wt% chitosan to the TiO2film (D2), the surface pore size became the smallest, and the pores were fairly evenly distributed. The electron transit time, electron recombination lifetime, diffusion coefficient, and diffusion length were analyzed by IMVS and IMPS. The best DSSC, with 2.0 wt% chitosan addition to the TiO2film, had a shorter electron transit time, longer electron recombination lifetime, and larger diffusion coefficient and diffusion length than the other samples. The results of 2.0 wt% chitosan-added TiO2DSSCs are an electron transit time of  s, electron recombination lifetime of  s, diffusion coefficient of  cm2s−1, diffusion length of 14.81 μm, and a solar conversion efficiency of 4.18%.

Carrier concentration and diffusion length measurements by 8‐mm‐microwave magnetophotoreflectivity in germanium and silicon

1974 ◽  
Vol 45 (8) ◽  
pp. 3380-3384 ◽  
Author(s):  
André Fortini ◽  
Richard Lande ◽  
Roger Madelon ◽  
Philippe Bauduin
Keyword(s):  
Carrier Concentration ◽  
Diffusion Length ◽  
Length Measurements ◽  
And Diffusion

Deep-level defects and diffusion length measurements in low energy proton-irradiated GaAs

1980 ◽  
Vol 9 (2) ◽  
pp. 335-354 ◽  
Author(s):  
Sheng S. Li ◽  
W. L. Wang ◽  
P. W. Lai ◽  
R. T. Owen ◽  
R. Y. Loo ◽  
...  
Keyword(s):  
Diffusion Length ◽  
Deep Level ◽  
Low Energy ◽  
Energy Proton ◽  
Length Measurements ◽  
And Diffusion

Injection and temperature dependent carrier recombination rate and diffusion length in freestanding CVD diamond

2013 ◽  
Vol 210 (10) ◽  
pp. 2016-2021 ◽  
Author(s):  
Patrik Ščajev ◽  
Vytautas Gudelis ◽  
Alexandre Tallaire ◽  
Julien Barjon ◽  
Kęstutis Jarašiūnas
Keyword(s):  
Recombination Rate ◽  
Diffusion Length ◽  
Cvd Diamond ◽  
Temperature Dependent ◽  
Carrier Recombination ◽  
And Diffusion

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Minority carrier lifetime and diffusion length in type II superlattice barrier devices

2019 ◽  
Vol 96 ◽  
pp. 155-162 ◽  
Author(s):  
P.C. Klipstein ◽  
Y. Benny ◽  
S. Gliksman ◽  
A. Glozman ◽  
E. Hojman ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
And Diffusion
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