Injection and temperature dependent carrier recombination rate and diffusion length in freestanding CVD diamond

2013 ◽  
Vol 210 (10) ◽  
pp. 2016-2021 ◽  
Author(s):  
Patrik Ščajev ◽  
Vytautas Gudelis ◽  
Alexandre Tallaire ◽  
Julien Barjon ◽  
Kęstutis Jarašiūnas
Keyword(s):  
Recombination Rate ◽  
Diffusion Length ◽  
Cvd Diamond ◽  
Temperature Dependent ◽  
Carrier Recombination ◽  
And Diffusion

Temperature dependent carrier lifetime, diffusion coefficient, and diffusion length in Ge0.95Sn0.05 epilayer

2020 ◽  
Vol 128 (11) ◽  
pp. 115103
Author(s):  
Patrik Ščajev ◽  
Vaiva Soriūtė ◽  
Gediminas Kreiza ◽  
Tadas Malinauskas ◽  
Sandra Stanionytė ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Carrier Lifetime ◽  
Diffusion Length ◽  
Temperature Dependent ◽  
And Diffusion

scholarly journals Crystallite size dependent carrier recombination rate and thermal diffusivity in undoped and boron doped CVD diamond layers

2013 ◽  
Vol 210 (10) ◽  
pp. 2022-2027 ◽  
Author(s):  
P. Ščajev ◽  
S. Nargelas ◽  
K. Jarašiūnas ◽  
I. Kisialiou ◽  
E. Ivakin ◽  
...  
Keyword(s):  
Thermal Diffusivity ◽  
Crystallite Size ◽  
Recombination Rate ◽  
Cvd Diamond ◽  
Size Dependent ◽  
Carrier Recombination ◽  
Boron Doped

A carrier density dependent diffusion coefficient, recombination rate and diffusion length in MAPbI3 and MAPbBr3 crystals measured under one- and two-photon excitations

2020 ◽  
Vol 8 (30) ◽  
pp. 10290-10301 ◽  
Author(s):  
Patrik Ščajev ◽  
Saulius Miasojedovas ◽  
Saulius Juršėnas
Keyword(s):  
Diffusion Coefficient ◽  
Recombination Rate ◽  
Carrier Density ◽  
Diffusion Length ◽  
Density Range ◽  
Density Dependent ◽  
Two Photon ◽  
Diffusion Rates ◽  
And Diffusion ◽  
Photon Excitations

Recombination, diffusion rates and diffusion length in MAPbI3 and MAPBr3 crystals in a wide carrier density range: experiment and theory.

Minority carrier lifetime and diffusion length in type II superlattice barrier devices

2019 ◽  
Vol 96 ◽  
pp. 155-162 ◽  
Author(s):  
P.C. Klipstein ◽  
Y. Benny ◽  
S. Gliksman ◽  
A. Glozman ◽  
E. Hojman ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
And Diffusion

Equilibrium Spectrum and Diffusion Length in Natural Uranium

1958 ◽  
Vol 3 (6) ◽  
pp. 772-773 ◽  
Author(s):  
D. Meneghetti ◽  
H. H. Hummel ◽  
W. B. Loewenstein
Keyword(s):  
Diffusion Length ◽  
Natural Uranium ◽  
Equilibrium Spectrum ◽  
And Diffusion

Few-Layered MoS2 Nanoparticles Loaded TiO2 Nanosheets with Exposed {001} Facets for Enhanced Photocatalytic Activity

NANO ◽  
2018 ◽  
Vol 13 (11) ◽  
pp. 1850129 ◽  
Author(s):  
Chujun Chen ◽  
Xia Xin ◽  
Jinniu Zhang ◽  
Gang Li ◽  
Yafeng Zhang ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Charge Carrier ◽  
Visible Light ◽  
Recombination Rate ◽  
Active Species ◽  
Molar Ratio ◽  
Carrier Recombination ◽  
Tio2 Nanosheets ◽  
Photocatalytic Activities ◽  
Charge Carrier Recombination

To improve the high charge carrier recombination rate and low visible light absorption of {001} facets exposed TiO2 [TiO2(001)] nanosheets, few-layered MoS2 nanoparticles were loaded on the surfaces of TiO2(001) nanosheets by a simple photodeposition method. The photocatalytic activities towards Rhodamine B (RhB) were investigated. The results showed that the MoS2–TiO2(001) nanocomposites exhibited much enhanced photocatalytic activities compared with the pure TiO2(001) nanosheets. At an optimal Mo/Ti molar ratio of 25%, the MoS2–TiO2(001) nanocomposites displayed the highest photocatalytic activity, which took only 30[Formula: see text]min to degrade 50[Formula: see text]mL of RhB (50[Formula: see text]mg/L). The active species in the degradation reaction were determined to be h[Formula: see text] and [Formula: see text]OH according to the free radical trapping experiments. The reduced charge carrier recombination rate, enhanced visible light utilization and increased surface areas contributed to the enhanced photocatalytic performances of the 25% MoS2–TiO2(001) nanocomposites.

scholarly journals Recombination and diffusion processes in electronic grade 4H silicon carbide

2019 ◽  
Vol 59 (1) ◽  
Author(s):  
Patrik Ščajev ◽  
Liudvikas Subačius ◽  
Kęstutis Jarašiūnas ◽  
Masashi Kato
Keyword(s):  
Functional Form ◽  
Diffusion Processes ◽  
Laser Pulses ◽  
Free Carrier Absorption ◽  
Temperature Dependent ◽  
Subsequent Decrease ◽  
Recombination Processes ◽  
Carrier Absorption ◽  
And Diffusion ◽  
Trap Activation

Carrier dynamics in n-type 4H-SiC epilayers of varying thicknesses and low Z1/2 defect concentrations are investigated here in wide ranges of excess carrier density and temperature. Several techniques are employed to monitor carrier diffusion and recombination processes, including light induced transient grating (LITG), microwave photoconductance decay (MPCD) and free carrier absorption (FCA) using ps-laser pulses at 355 nm. The observed increase of the diffusion coefficient with the increasing excitation level is explained by the transition from the minority to the bipolar transport regime. Its subsequent decrease with even higher excitations is found to be governed by band-gap renormalization and degeneracy effects. The bulk lifetime, limited by hole traps at 0.19–0.24 eV above the valence band at lower excitations, was found to decrease from few microseconds to hundreds of nanoseconds during the transition regime from the minority to the bipolar transport. Our temperature-dependent measurements confirmed the trap activation energy and provided the approximate functional form of electron and hole lifetimes as τe = 340 × (T/300 K)3/2 ns and τh = 100 × (T/300 K)–1/2 ns, for the temperature T range 80–800 K. It was found to hold for 65 and 120 μm sample thicknesses, while the lifetimes were found to be twice shorter for the sample 35 μm thick.

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