Excitation and temperature dependent exciton-carrier transport in CVD diamond: Diffusion coefficient, recombination lifetime and diffusion length

2017 ◽  
Vol 510 ◽  
pp. 92-98 ◽  
Author(s):  
Patrik Ščajev
Keyword(s):  
Diffusion Coefficient ◽  
Carrier Transport ◽  
Diffusion Length ◽  
Cvd Diamond ◽  
Temperature Dependent ◽  
Recombination Lifetime ◽  
And Diffusion

scholarly journals Preparation and Characterization of Chitosan Binder-Based Electrode for Dye-Sensitized Solar Cells

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
En Mei Jin ◽  
Kyung-Hee Park ◽  
Ju-Young Park ◽  
Jae-Wook Lee ◽  
Soon-Ho Yim ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Solar Cells ◽  
Transit Time ◽  
Diffusion Length ◽  
Dye Sensitized Solar Cells ◽  
Electron Recombination ◽  
Recombination Lifetime ◽  
Dye Sensitized ◽  
Sensitized Solar Cells ◽  
And Diffusion

A chitosan binder-based TiO2photoelectrode is used in dye-sensitized solar cells (DSSCs). Field-emission scanning electron microscope (FE-SEM) images revealed that the grain size, thickness, and distribution of TiO2films are affected by the chitosan content. With addition of 2.0 wt% chitosan to the TiO2film (D2), the surface pore size became the smallest, and the pores were fairly evenly distributed. The electron transit time, electron recombination lifetime, diffusion coefficient, and diffusion length were analyzed by IMVS and IMPS. The best DSSC, with 2.0 wt% chitosan addition to the TiO2film, had a shorter electron transit time, longer electron recombination lifetime, and larger diffusion coefficient and diffusion length than the other samples. The results of 2.0 wt% chitosan-added TiO2DSSCs are an electron transit time of  s, electron recombination lifetime of  s, diffusion coefficient of  cm2s−1, diffusion length of 14.81 μm, and a solar conversion efficiency of 4.18%.

Temperature dependent carrier lifetime, diffusion coefficient, and diffusion length in Ge0.95Sn0.05 epilayer

2020 ◽  
Vol 128 (11) ◽  
pp. 115103
Author(s):  
Patrik Ščajev ◽  
Vaiva Soriūtė ◽  
Gediminas Kreiza ◽  
Tadas Malinauskas ◽  
Sandra Stanionytė ◽  
...  
Keyword(s):  
Diffusion Coefficient ◽  
Carrier Lifetime ◽  
Diffusion Length ◽  
Temperature Dependent ◽  
And Diffusion

Injection and temperature dependent carrier recombination rate and diffusion length in freestanding CVD diamond

2013 ◽  
Vol 210 (10) ◽  
pp. 2016-2021 ◽  
Author(s):  
Patrik Ščajev ◽  
Vytautas Gudelis ◽  
Alexandre Tallaire ◽  
Julien Barjon ◽  
Kęstutis Jarašiūnas
Keyword(s):  
Recombination Rate ◽  
Diffusion Length ◽  
Cvd Diamond ◽  
Temperature Dependent ◽  
Carrier Recombination ◽  
And Diffusion

A carrier density dependent diffusion coefficient, recombination rate and diffusion length in MAPbI3 and MAPbBr3 crystals measured under one- and two-photon excitations

2020 ◽  
Vol 8 (30) ◽  
pp. 10290-10301 ◽  
Author(s):  
Patrik Ščajev ◽  
Saulius Miasojedovas ◽  
Saulius Juršėnas
Keyword(s):  
Diffusion Coefficient ◽  
Recombination Rate ◽  
Carrier Density ◽  
Diffusion Length ◽  
Density Range ◽  
Density Dependent ◽  
Two Photon ◽  
Diffusion Rates ◽  
And Diffusion ◽  
Photon Excitations

Recombination, diffusion rates and diffusion length in MAPbI3 and MAPBr3 crystals in a wide carrier density range: experiment and theory.

Calculation of radon diffusion coefficient and diffusion length for different building construction materials

2009 ◽  
Vol 83 (8) ◽  
pp. 1171-1175 ◽  
Author(s):  
A. K. Narula ◽  
S. K. Goyal ◽  
Savita Saini ◽  
R. P. Chauhan ◽  
S. K. Chakarvarti
Keyword(s):  
Diffusion Coefficient ◽  
Diffusion Length ◽  
Construction Materials ◽  
Building Construction ◽  
Radon Diffusion ◽  
And Diffusion

Rate limiting interfacial hole transfer in Sb2S3 solid-state solar cells

2014 ◽  
Vol 7 (3) ◽  
pp. 1148-1158 ◽  
Author(s):  
Jeffrey A. Christians ◽  
David T. Leighton ◽  
Prashant V. Kamat
Keyword(s):  
Diffusion Coefficient ◽  
Solar Cells ◽  
Solid State ◽  
Diffusion Length ◽  
Hole Transfer ◽  
Rate Limiting ◽  
And Diffusion

The hole diffusion coefficient and diffusion length in Sb2S3 is measured. Hole transfer from Sb2S3 to CuSCN is found to be predominately limited by transfer across the Sb2S3–CuSCN interface.

scholarly journals CALCULATION OF RADON DIFFUSION COFFICIENT AND DIFFUSION LENGTH IN SOME SOILS TYPES

2018 ◽  
Vol 49 (6) ◽  
Author(s):  
Ali & eta l.
Keyword(s):  
Diffusion Coefficient ◽  
Diffusion Length ◽  
Exposure System ◽  
Radon Gas ◽  
Radon Diffusion ◽  
Low Humidity ◽  
And Diffusion ◽  
Different Soils

 In this study, the effect of humidity on the diffusion coefficient of radon gas and the diffusion length was studied  in different soils .We have used a modern device( SARAD German-made)was used to calculate the concentration of radon in different degrees of humidity and temperature. After linking it to the exposure system for radon, which was made by the researchers ,results obtained for soil indicated to a great agreement between the theoretical(predicted) and practical (measured) values ​​of the results of this study. ​​The study also indicated that diffusion coefficient decreased at slightly increasing of humidity by (10% -60%) of the diffusion coefficient results in the low humidity levels, which are less than 40% with a significant increase of more than(10%-60%)for humidity levels greater than 40% .Also for the diffusion length, it decreases with increasing of humidity.

Joule Heating Effect in Constant Voltage Mode Isotachophoresis in a Microchannel

2012 ◽  
Vol 13 (5) ◽  
Author(s):  
Jaesool Shim ◽  
Prashanta Dutta
Keyword(s):  
Diffusion Coefficient ◽  
Joule Heating ◽  
Chemical Species ◽  
Initial Mixture ◽  
Constant Voltage ◽  
Temperature Dependent ◽  
Voltage Mode ◽  
Electroneutrality Condition ◽  
Temperature Dependent Properties ◽  
And Diffusion

AbstractMicrochip ITP (isotachophoresis) is getting popularity as a preparative technique for preconcentration and separation of chemical species and/or ions in liquid phase. In constant voltage mode ITP, generally a high electric potential difference is applied to a discontinuous buffer for faster and higher resolution separation. However, the higher current from the applied electric field induces Joule heating in the buffer which modifies the mobility and diffusion coefficient of analytes in the system. This change in mobility and diffusion coefficient strongly influences the transient separation process in ITP. In this study the effect of Joule heating on separation behavior of analyte compounds has been presented in a constant voltage mode ITP where two chemical species are separated from an initial mixture. The model is based on mass, energy, and charge conservation and electroneutrality condition in the system. A set of nonlinear governing equations are solved numerically for temperature dependent properties such as diffusion coefficient, effective electrophoretic mobility, and thermal conductivity using a finite volume based model. Numerical results suggest that for temperature dependent properties of control parameters, the separation speed of analytes is significantly different from that of constant temperature case. In constant voltage mode ITP, the temperature peak forms at the location of trailing electrolyte, and its influence propagates toward the direction of band movement as separation proceeds.

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