Deep-level defects and diffusion length measurements in low energy proton-irradiated GaAs

1980 ◽  
Vol 9 (2) ◽  
pp. 335-354 ◽  
Author(s):  
Sheng S. Li ◽  
W. L. Wang ◽  
P. W. Lai ◽  
R. T. Owen ◽  
R. Y. Loo ◽  
...  
Keyword(s):  
Diffusion Length ◽  
Deep Level ◽  
Low Energy ◽  
Energy Proton ◽  
Length Measurements ◽  
And Diffusion

Carrier concentration and diffusion length measurements by 8‐mm‐microwave magnetophotoreflectivity in germanium and silicon

1974 ◽  
Vol 45 (8) ◽  
pp. 3380-3384 ◽  
Author(s):  
André Fortini ◽  
Richard Lande ◽  
Roger Madelon ◽  
Philippe Bauduin
Keyword(s):  
Carrier Concentration ◽  
Diffusion Length ◽  
Length Measurements ◽  
And Diffusion

Deep-level defects, recombination mechanisms, and their correlation to the performance of low-energy proton-irradiated AlGaAs—GaAs solar cells

1980 ◽  
Vol 27 (4) ◽  
pp. 857-864 ◽  
Author(s):  
S.S. Li ◽  
Weng-Lyang Wang ◽  
Pan-Wei Lai ◽  
R.Y. Loo ◽  
G.S. Kamath ◽  
...  
Keyword(s):  
Solar Cells ◽  
Deep Level ◽  
Low Energy ◽  
Energy Proton

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Minority carrier lifetime and diffusion length in type II superlattice barrier devices

2019 ◽  
Vol 96 ◽  
pp. 155-162 ◽  
Author(s):  
P.C. Klipstein ◽  
Y. Benny ◽  
S. Gliksman ◽  
A. Glozman ◽  
E. Hojman ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Lifetime ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
And Diffusion

Lateral Dopant Diffusion Length Measurements Using Silicon Microring Resonators

2018 ◽  
Vol 30 (24) ◽  
pp. 2163-2166 ◽  
Author(s):  
Vadivukkarasi Jeyaselvan ◽  
Shankar Kumar Selvaraja
Keyword(s):  
Diffusion Length ◽  
Microring Resonators ◽  
Dopant Diffusion ◽  
Length Measurements
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