Superlinear Current Density vs Electric Field in p‐Type Silicon‐on‐Sapphire

1970 ◽  
Vol 41 (6) ◽  
pp. 2657-2664 ◽  
Author(s):  
E. C. Ross ◽  
G. Warfield
Keyword(s):  
Electric Field ◽  
Current Density ◽  
Type Silicon ◽  
P Type

Effects of current density and time on the characteristics of P-type silicon nano array

2018 ◽  
Vol 676 (1) ◽  
pp. 123-130
Author(s):  
Han Hee Ryu ◽  
Jae Keon Kim ◽  
Jun Yeop Lee ◽  
Seong Ho Kong ◽  
Daewoong Jung
Keyword(s):  
Current Density ◽  
Type Silicon ◽  
P Type

Dependence of Hydrogen Diffusion on the Electric Field in p-Type Silicon

2004 ◽  
Vol 151 (9) ◽  
pp. G564 ◽  
Author(s):  
Y. L. Huang ◽  
B. Wdowiak ◽  
R. Job ◽  
Y. Ma ◽  
W. R. Fahrner
Keyword(s):  
Electric Field ◽  
Hydrogen Diffusion ◽  
Type Silicon ◽  
P Type

Investigation on patterned structures formed on p-type silicon and its morphological dependence on current density

2007 ◽  
Vol 23 (4) ◽  
pp. 471-474
Author(s):  
S. Balakrishnan ◽  
Y. K. Gun'ko ◽  
T. S. Perova ◽  
J. Patrick ◽  
R. A. Moore
Keyword(s):  
Current Density ◽  
Type Silicon ◽  
Patterned Structures ◽  
P Type

scholarly journals INJECTION ANNEALING OF THE SELF DI-INTERSTITIAL – OXYGEN COMPLEX IN p-TYPE SILICON

2018 ◽  
Vol 54 (2) ◽  
pp. 220-228
Author(s):  
L. F. Makarenko ◽  
S. B. Lastovskii ◽  
E. Gaubas ◽  
Je. A. Pavlov ◽  
M. Moll ◽  
...  
Keyword(s):  
Current Density ◽  
Room Temperature ◽  
Correlation Energy ◽  
Defect Density ◽  
Deep Level ◽  
Electron Trap ◽  
Interstitial Oxygen ◽  
Hole Trap ◽  
Type Silicon ◽  
P Type

With the use of deep level transient spectroscopy (DLTS) the effect of injection of minority charge carriers (electrons) on an annealing rate of self di-interstitial – oxygen (I2O) complex in silicon has been studied. The complex has been formed by irradiation of epitaxial boron-doped n+–p diode structures with alpha-particles at room temperature. It has been shown that the disappearance of this complex at room temperature begins at a direct current density of ~1.5 A/cm2. This characteristic current density has been found for 10 W·cm p-type silicon when the total radiation defect density was less than 15 % of the initial boron concentration, a divalent hole trap with energy levels of Ev + 0.43 eV and Ev + 0.54 eV has been found to appear as a result of recombination-enhanced annealing of the I2O. When the I2O complex is annealed thermally, the concurrent appearance of an electron trap with an energy level of Ec – 0.35 eV has been observed. It has been shown that the divalent hole trap represents a metastable configuration (BH-configuration) of the bistable defect, whereas the electron trap is stab le in the p-Si configuration (ME-configuration). From the comparison of DLTS signals related to different defect configurations it is found that the ME-configuration of this bistable defect can be characterized as a center with negative correlation energy. It has been shown that the injection-stimulated processes make it very difficult to obtain reliable data on the formation kinetics of the bistable defect in the BH-configuration when studying the thermal annealing of the I2O complex.

scholarly journals FORMATION OF POROUS SILICON ON A HIGHLY DOPED P-TYPE MONOCRYSTALLINE SILICON

Doklady BGUIR ◽  
2019 ◽  
pp. 31-37
Author(s):  
A. D. Hurbo ◽  
A. V. Klimenka ◽  
V. P. Bondarenko
Keyword(s):  
Mathematical Model ◽  
Porous Silicon ◽  
Current Density ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Type Silicon ◽  
Effective Valence ◽  
P Type ◽  
Silicon Dissolution

Porous silicon layers were formed on a p-type silicon wafers by electrochemical anodisation. Dependencies of thickness and porosity of porous silicon layers as well as effective valence of silicon dissolution versus anodizing time and current density were obtained and analysed. A mathematical model for growth of layers of porous silicon was developed.  

Sign in / Sign up

Export Citation Format

Share Document