scholarly journals Charging Effect on Electrical Characteristics of MOS Structures with Si Nanocrystal Distribution in Gate Oxide

2004 ◽  
Vol 7 (7) ◽  
pp. G134 ◽  
Author(s):  
Y. Liu ◽  
T. P. Chen ◽  
C. Y. Ng ◽  
M. S. Tse ◽  
S. Fung ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Electrical Characteristics ◽  
Si Nanocrystal ◽  
Mos Structures ◽  
Charging Effect

Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N2O or NO

2009 ◽  
Vol 615-617 ◽  
pp. 521-524 ◽  
Author(s):  
Michael Grieb ◽  
Masato Noborio ◽  
Dethard Peters ◽  
Anton J. Bauer ◽  
Peter Friedrichs ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Gate Oxide ◽  
Constant Current ◽  
Electrical Characteristics ◽  
Channel Mobility ◽  
Thermally Grown Oxides ◽  
Mos Devices ◽  
Mos Structures ◽  
Thermally Grown

In this work, the electrical characteristics and the reliability of 80nm thick deposited oxides annealed in NO and N2O on the 4H-SiC Si-face for gate oxide application in MOS devices is analyzed by C-V, I-V measurements and by constant current stress. Compared to thermally grown oxides, the deposited oxides annealed in N2O or NO showed improved electrical properties. Dit-values lower than 1011cm-2eV-1 have been achieved for the NO sample. The intrinsic QBD-values of deposited and annealed oxides are one order of magnitudes higher than the highest values reported for thermally grown oxides. Also MOSFETS were fabricated with a channel mobility of 20.05 cm2/Vs for the NO annealed deposited oxide. Furthermore annealing in NO is preferred to annealing in N2O regarding µFE- and QBD-values.

A Novel Multi-Channel Poly-Si TFT Improving Hydrogen Passivation

1997 ◽  
Vol 471 ◽  
Author(s):  
C. M. Park ◽  
J.-H. Jeon ◽  
J.-S. Yoo ◽  
M.-K. Han
Keyword(s):  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Gate Oxide ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
New Device ◽  
Hydrogen Radicals ◽  
Long Channel ◽  
Conventional Device

ABSTARCT:We have fabricated a new multi-channel polycrystalline silicon thin film transistor (ploy-Si TFT), of which structure may be more effectively hydrogenated than conventional multi-channel poly-Si TFT. The new multi-channel TFT has stripe-cuts in gate electrode so that more hydrogen radicals penetrate into the gate oxide and passivate the active poly-Si layer. After 90 min. hydrogenation of the new device, the electrical characteristics such as threshold voltage and field effect mobility are improved more than those of conventional device.The new multi-channel poly-Si TFT, which receives more hydrogen radicals thorough gate oxide than the conventional multi-channel TFT, can be hydrogenated effectively in long channel devices. Besides the improvement of the device characteristics, our experimental results show that the dominant hydrogenation path is the diffusion though the gate oxide.

2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

2017 ◽  
Vol 64 (3) ◽  
pp. 960-968 ◽  
Author(s):  
Sanjay Kumar ◽  
Ekta Goel ◽  
Kunal Singh ◽  
Balraj Singh ◽  
Prince Kumar Singh ◽  
...  
Keyword(s):  
Analytical Modeling ◽  
Gate Oxide ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Oxide Structure ◽  
Dual Material

Tunneling Effects in NH3 Annealed 4H-SiC Trench MOSFETs

2020 ◽  
Vol 1004 ◽  
pp. 652-658
Author(s):  
Judith Berens ◽  
Gregor Pobegen ◽  
Tibor Grasser
Keyword(s):  
Effective Activation Energy ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Device Performance ◽  
Trap Level ◽  
Effective Activation ◽  
Oxide Reliability ◽  
Trap Assisted Tunneling ◽  
Assisted Tunneling ◽  
Mos Structures

The interface between the gate oxide and silicon carbide (SiC) has a strong influence on the performance and reliability of SiC MOSFETs and thus, requires special attention. In order to reduce charge trapping at the interface, post oxidation anneals (POAs) are conventionally applied. However, these anneals do not only influence the device performance, such as mobility and on-resistance, but also the gate oxide reliability. We study the oxide tunneling mechanisms of NH3 annealed 4H-SiC trench MOSFET test structures and compare them to devices which received a NO POA. We show that 3 different mechanisms, namely trap assisted tunneling (TAT), Fowler-Nordheim (FN) tunneling and charge trapping are found for NH3 annealed MOS structures whereas only FN-tunneling is observed in NO annealed devices.The tunneling barrier suggest a trap level with an effective activation energy of 382 meV to enable TAT.

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