scholarly journals Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams

2006 ◽  
Vol 99 (10) ◽  
pp. 106105 ◽  
Author(s):  
C. Y. Ng ◽  
T. P. Chen ◽  
P. Zhao ◽  
L. Ding ◽  
Y. Liu ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Ion Beams ◽  
Low Energy ◽  
Electrical Characteristics ◽  
Narrow Layer ◽  
Si Nanocrystal

Low Energy Proton Radiation Impact on 4H-SiC nMOSFET Gate Oxide Stability

2014 ◽  
Vol 778-780 ◽  
pp. 525-528 ◽  
Author(s):  
Matthieu Florentin ◽  
Mihaela Alexandru ◽  
Aurore Constant ◽  
Bernd Schmidt ◽  
José Millan ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Proton Irradiation ◽  
Electrical Response ◽  
Gate Oxide ◽  
High Energy ◽  
Low Energy ◽  
Electrical Characteristics ◽  
Proton Radiation ◽  
High Energy Proton ◽  
Energy Proton

The 4H-SiC MOSFET electrical response to 180 keV proton radiations at three different fluences has been evaluated. For a certain dose, the devices show an apparent improvement of their electrical characteristics likely due to the N and/or H atoms diffusion inside the oxide layer. This work complete our previous studies on high energy proton irradiation, showing that the 4H-SiC MOSFET is also robust to the low energy proton radiation, when the proton implanted range is located near the MOS interface.

scholarly journals Charging Effect on Electrical Characteristics of MOS Structures with Si Nanocrystal Distribution in Gate Oxide

2004 ◽  
Vol 7 (7) ◽  
pp. G134 ◽  
Author(s):  
Y. Liu ◽  
T. P. Chen ◽  
C. Y. Ng ◽  
M. S. Tse ◽  
S. Fung ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Electrical Characteristics ◽  
Si Nanocrystal ◽  
Mos Structures ◽  
Charging Effect

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

An Effective SIMS Methodology for GOI Contamination Analysis

2013 ◽  
Author(s):  
Yanhua Huang ◽  
Lei Zhu ◽  
Kenny Ong ◽  
Hanwei Teo ◽  
Younan Hua
Keyword(s):  
Oxide Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Gate Oxide ◽  
Sample Surface ◽  
Low Energy ◽  
Cross Contamination ◽  
Common Effect ◽  
Sims Analysis ◽  
Secondary Ion ◽  
Lower Background

Abstract Contamination in the gate oxide layer is the most common effect which cause the gate oxide integrate (GOI) issue. Dynamic Secondary Ion Mass Spectrometry (SIMS) is a mature tool for GOI contamination analysis. During the sample preparation, all metal and IDL layers above poly should be removed because the presence of these layers added complexity for the subsequent SIMS analysis. The normal delayering process is simply carried out by soaking the sample in the HF solution. However, the poly surface is inevitably contaminated by surroundings even though it is already a practice to clean with DI rinse and tape. In this article, TOFSIMS with low energy sputter gun is used to clean the sample surface after the normal delayering process. The residue signals also can be monitored by TOF SIMS during sputtering to confirm the cross contamination is cleared. After that, a much lower background desirable by dynamic SIMS. Thus an accurate depth profile in gate oxide layer can be achieved without the interference from surface.

An automatic beam positioning system for low energy ion beams

1969 ◽  
Vol 72 (2) ◽  
pp. 217-219 ◽  
Author(s):  
R.B. Brown ◽  
P.D. Bourland ◽  
D. Powers
Keyword(s):  
Ion Beams ◽  
Low Energy ◽  
Positioning System

scholarly journals Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

2007 ◽  
Vol 101 (12) ◽  
pp. 124313 ◽  
Author(s):  
M. Yang ◽  
T. P. Chen ◽  
J. I. Wong ◽  
C. Y. Ng ◽  
Y. Liu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Low Energy ◽  
Ge Nanocrystals

A Novel Multi-Channel Poly-Si TFT Improving Hydrogen Passivation

1997 ◽  
Vol 471 ◽  
Author(s):  
C. M. Park ◽  
J.-H. Jeon ◽  
J.-S. Yoo ◽  
M.-K. Han
Keyword(s):  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Gate Oxide ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
New Device ◽  
Hydrogen Radicals ◽  
Long Channel ◽  
Conventional Device

ABSTARCT:We have fabricated a new multi-channel polycrystalline silicon thin film transistor (ploy-Si TFT), of which structure may be more effectively hydrogenated than conventional multi-channel poly-Si TFT. The new multi-channel TFT has stripe-cuts in gate electrode so that more hydrogen radicals penetrate into the gate oxide and passivate the active poly-Si layer. After 90 min. hydrogenation of the new device, the electrical characteristics such as threshold voltage and field effect mobility are improved more than those of conventional device.The new multi-channel poly-Si TFT, which receives more hydrogen radicals thorough gate oxide than the conventional multi-channel TFT, can be hydrogenated effectively in long channel devices. Besides the improvement of the device characteristics, our experimental results show that the dominant hydrogenation path is the diffusion though the gate oxide.

Transport of intense ion beams and space charge compensation issues in low energy beam lines (invited)

2012 ◽  
Vol 83 (2) ◽  
pp. 02B320 ◽  
Author(s):  
N. Chauvin ◽  
O. Delferrière ◽  
R. Duperrier ◽  
R. Gobin ◽  
P. A. P. Nghiem ◽  
...  
Keyword(s):  
Space Charge ◽  
Charge Compensation ◽  
Ion Beams ◽  
Low Energy ◽  
Energy Beam
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