Detecting Defects in Cu Metallization Structures by Electron-Beam Wafer Inspection

2004 ◽  
Vol 151 (6) ◽  
pp. G440 ◽  
Author(s):  
Miyako Matsui ◽  
Cheng Zhaohui ◽  
Mari Nozoe ◽  
Katsuhiro Torii
Keyword(s):  
Electron Beam ◽  
Cu Metallization ◽  
Wafer Inspection

Etch process monitoring by electron beam wafer inspection

2007 ◽  
Author(s):  
Luke Lin ◽  
Jia-Yun Chen ◽  
Wen-Yi Wong ◽  
Mark McCord ◽  
Alex Tsai ◽  
...  
Keyword(s):  
Electron Beam ◽  
Process Monitoring ◽  
Wafer Inspection

scholarly journals Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si

2021 ◽  
Vol 32 (6) ◽  
pp. 7123-7135
Author(s):  
D. Thammaiah Shivakumar ◽  
Tihomir Knežević ◽  
Lis K. Nanver
Keyword(s):  
Electron Beam ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Anode Region ◽  
Junction Depth ◽  
Cu Metallization ◽  
Temperature Interactions

AbstractMetallization layers of aluminum, gold, or copper are shown to be protected from interactions with silicon substrates by thin boron layers grown by chemical-vapor deposition (CVD) at 450 °C. A 3-nm-thick B-layer was studied in detail. It formed the p+-anode region of PureB diodes that have a metallurgic junction depth of zero on n-type Si. The metals were deposited by electron-beam-assisted physical vapor deposition (EBPVD) at room temperature and annealed at temperatures up to 500 °C. In all cases, the B-layer was an effective material barrier between the metal and Si, as verified by practically unchanged PureB diode I–V characteristics and microscopy inspections of the deposited layers. For this result, it was required that the Si surface be clean before B-deposition. Any Si surface contamination was otherwise seen to impede a complete B-coverage giving, sometimes Schottky-like, current increases. For Au, room-temperature interactions with the Si through such pinholes in the B-layer were excessive after the 500 °C anneal.

Characterization of a new automated electron beam wafer inspection system

1995 ◽  
Author(s):  
Douglas Hendricks ◽  
Jack Y. Jau ◽  
Hans Dohse ◽  
Alan D. Brodie ◽  
William D. Meisburger
Keyword(s):  
Electron Beam ◽  
Inspection System ◽  
Wafer Inspection

Low energy large scan field electron beam column for wafer inspection

2004 ◽  
Vol 22 (6) ◽  
pp. 3534 ◽  
Author(s):  
X. Liu ◽  
X. Zhang ◽  
Y. Zhao ◽  
A. Desai ◽  
Z. W. Chen
Keyword(s):  
Electron Beam ◽  
Low Energy ◽  
Wafer Inspection ◽  
Field Electron

Assessing the viability of multi-electron beam wafer inspection for sub-20nm defects

2014 ◽  
Author(s):  
Brad Thiel ◽  
Michael Lercel ◽  
Benjamin Bunday ◽  
Matt Malloy
Keyword(s):  
Electron Beam ◽  
Wafer Inspection

Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

1971 ◽  
Vol 29 ◽  
pp. 204-205
Author(s):  
G. G. Shaw
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Aluminum Alloy ◽  
Electron Beam ◽  
Pure Aluminum ◽  
Ion Milling ◽  
Transmission Electron ◽  
Fiber Matrix ◽  
Ion Erosion ◽  
Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

Temperature Dependence of the Critical Electron Dose for Fatty Acid Monolayers

1982 ◽  
Vol 40 ◽  
pp. 78-79
Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser
Keyword(s):  
Electron Beam ◽  
Fatty Acid ◽  
Inelastic Scattering ◽  
Temperature Dependence ◽  
Structural Damage ◽  
Direct Result ◽  
Second Step ◽  
Strong Temperature Dependence ◽  
Electron Dose ◽  
Covalent Bonds

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Domain Formation in Synthetic Quartz

1971 ◽  
Vol 29 ◽  
pp. 156-157
Author(s):  
Joseph J. Comer
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Domain Formation ◽  
Synthetic Quartz ◽  
Transmission Electron ◽  
Black Spots ◽  
Diffraction Mode ◽  
Domain Boundaries ◽  
Kikuchi Lines ◽  
Straight Lines

Domains visible by transmission electron microscopy, believed to be Dauphiné inversion twins, were found in some specimens of synthetic quartz heated to 680°C and cooled to room temperature. With the electron beam close to parallel to the [0001] direction the domain boundaries appeared as straight lines normal to <100> and <410> or <510> directions. In the selected area diffraction mode, a shift of the Kikuchi lines was observed when the electron beam was made to traverse the specimen across a boundary. This shift indicates a change in orientation which accounts for the visibility of the domain by diffraction contrast when the specimen is tilted. Upon exposure to a 100 KV electron beam with a flux of 5x 1018 electrons/cm2sec the boundaries are rapidly decorated by radiation damage centers appearing as black spots. Similar crystallographio boundaries were sometimes found in unannealed (0001) quartz damaged by electrons.

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