Interaction Forces Between Silica Particles and Wafer Surfaces during Chemical Mechanical Planarization of Copper

2003 ◽  
Vol 150 (5) ◽  
pp. G327 ◽  
Author(s):  
Su-Youn Lee ◽  
Sang-Ho Lee ◽  
Jin-Goo Park
Keyword(s):  
Chemical Mechanical Planarization ◽  
Silica Particles ◽  
Interaction Forces ◽  
Wafer Surfaces

Surface interaction forces in chemical-mechanical planarization

1997 ◽  
Vol 308-309 ◽  
pp. 529-532 ◽  
Author(s):  
Krishna Rajan ◽  
Rajiv Singh ◽  
J Adler ◽  
U Mahajan ◽  
Y Rabinovich ◽  
...  
Keyword(s):  
Chemical Mechanical Planarization ◽  
Surface Interaction ◽  
Interaction Forces

The Stability of Nano Fumed Silica Particles and Its Influence on Chemical Mechanical Planarization for Interlayer Dielectrics

2002 ◽  
Vol 41 (Part 1, No. 7A) ◽  
pp. 4509-4512 ◽  
Author(s):  
Jongphil Kim ◽  
Ungyu Paik ◽  
Yeon-Gil Jung ◽  
Takeo Katoh ◽  
Jea-Gun Park
Keyword(s):  
Fumed Silica ◽  
Chemical Mechanical Planarization ◽  
Silica Particles ◽  
Interlayer Dielectrics ◽  
The Stability

Planarization Ability of Chemical Mechanical Planarization (Cmp) Processes

1994 ◽  
Vol 337 ◽  
Author(s):  
Matt Stell ◽  
Rahul Jairath ◽  
Mukesh Desai ◽  
Robert Tolles
Keyword(s):  
Film Thickness ◽  
Chemical Mechanical Planarization ◽  
Silica Particles ◽  
The Other ◽  
Ph Values ◽  
Enhanced Solubility ◽  
Experimental Approaches ◽  
Thickness Measurements

ABSTRACTMethods for determining planarization ability of CMP were explored. Options included film thickness measurements of the dielectric over metal and field, TIR measurements using profilometry, and a combination of the two. The attempt to observe the in situ change in the topography was addressed in two distinct experimental approaches. The first approach involved processing wafers for predetermined intervals. The other approach processed different wafers for different amounts of time. The effects of down force and platen rpm on planarization ability were studied using the first approach. Results indicate that planarization is more efficient at higher down forces and higher platen rpm. Slurry property effects were examined using the second method. The planarization ability appears to suffer at elevated pH values. This is attributed to both the enhanced solubility of the silica particles and the dielectric itself.

scholarly journals Chemical Mechanical Planarization-Related to Contaminants: Their Sources and Characteristics

2020 ◽  
Author(s):  
Jihoon Seo
Keyword(s):  
Chemical Mechanical Planarization ◽  
Device Performance ◽  
Cross Contamination ◽  
Next Generation ◽  
Organic Residues ◽  
Fundamental Understanding ◽  
Critical Yield ◽  
Wafer Surfaces ◽  
Metallic Impurities

Chemical mechanical planarization (CMP) process has been widely used to planarize a variety of materials including dielectrics, metal, and semiconductors in Si-based semiconductor devices. It is one of the most critical steps to achieve the nanolevel wafer and die scale planarity. However, various contaminants are observed on the wafer surfaces after the CMP process, and they become the most critical yield detractor over many generations of rapidly diminishing feature sizes because they have the most direct impacts on device performance and reliability. This book chapter provides (1) CMP consumables-induced contaminants such as residual particles, surface residues, organic residues, pad debris and metallic impurities, pad contamination, watermark, etc., (2) brush-induced cross-contamination during post CMP cleaning, (3) post-CMP cleaning for removing these contaminants. Fundamental understanding of the formation of various types of CMP contaminants and their characteristics will significantly benefit the development of next-generation CMP slurries and post-CMP cleaning solutions.

The Adhesion of Pad Particles on Wafer Surfaces during Cu CMP

2005 ◽  
Vol 867 ◽  
Author(s):  
Jae-Hoon Song ◽  
Ja-Hyung Han ◽  
Yi-Koan Hong ◽  
Young-Jae Kang ◽  
Jin-Goo Park ◽  
...  
Keyword(s):  
Isoelectric Point ◽  
Adhesion Force ◽  
Dielectric Materials ◽  
Interaction Forces ◽  
Zeta Potentials ◽  
Alumina Particles ◽  
Cu Cmp ◽  
Wafer Surfaces

AbstractThe adhesion force of pad and alumina were experimentally and theoretically investigated in slurry solutions of different pHs. The isoelectric point (IEP) of pad particles was measured to be around pH 3. The wafer surfaces showed negative zeta potentials in the investigated pH ranges with exception of FSG and Ta. Cu and Ta showed higher interaction forces than dielectric materials. The lowest adhesion force was measured between pad particle and wafer surfaces in a slurry solution of pH 11. The magnitude of adhesion force of pad particles was lower than alumina particles.

Electrical Characterization of Slurry Particles and their Interactions with Wafer Surfaces

1999 ◽  
Vol 566 ◽  
Author(s):  
Jin-Goo Park ◽  
Sang-Ho Lee ◽  
Hyoung-Gyun Kim
Keyword(s):  
Particle Deposition ◽  
Colloidal Silica ◽  
Electrical Characterization ◽  
Dlvo Theory ◽  
Silica Particles ◽  
Zeta Potentials ◽  
Alumina Particles ◽  
Silica Alumina ◽  
Wafer Surfaces

The purpose of this study was to explore the interaction between slurry particles and wafer surfaces by the measurements of their zeta potentials. The zeta potentials of slurry particles such as fumed and colloidal silica, alumina, ceria and MnO2 and substrates such as silicon, TEOS, W, and Al have been measured by electrophoretic and electroosmosis method to evaluate the electrical properties of surfaces, respectively. The zeta potential of oxide and metal surfaces showed similar values to those of particles as a function of pH. The interaction energy between alumina and silica particles and TEOS, W and Al substrate were calculated based on DLVO theory. No deposition of silica particles on TEOS and the heavy deposition of alumina particles on metal substrates were observed in the particle deposition test. Experimental results were well agreed with the theoretical calculation.

Particle – Wafer Interactions in Semiaqueous Silicon Cleaning Systems

2009 ◽  
Vol 145-146 ◽  
pp. 77-84 ◽  
Author(s):  
Lukasz Hupka ◽  
Jakub Nalaskowski ◽  
Nishant Sinha ◽  
Joseph N. Greeley ◽  
Zak Clark ◽  
...  
Keyword(s):  
Interfacial Interaction ◽  
Submicron Particles ◽  
Wafer Surface ◽  
Short Range Interaction ◽  
Semiconductor Wafer ◽  
Range Interaction ◽  
Interaction Forces ◽  
Silica Surfaces ◽  
Particulate Contaminants ◽  
Wafer Surfaces

Interfacial interaction forces between particulate contaminants and semiconductor wafer surfaces play a key role in the understanding of post-CMP and post-lapping cleaning processes. In order to facilitate removal and prevent re-deposition of submicron particles on wafer surface, understanding, measurement, and manipulation of these forces is required. The theory of interaction forces in liquids that includes DLVO forces (van der Waals, electrical double layer) and non-DLVO (solvation, hydration, hydrophobic, steric and bridging forces) is well established and is studied elsewhere.1-4 Short range interaction forces between silica surfaces in alcohols have been successfully measured before using AFM.5-7

Interaction Forces between Microsized Silica Particles and Weak Polyelectrolyte Brushes at Varying pH and Salt Concentration

Langmuir ◽  
2010 ◽  
Vol 26 (9) ◽  
pp. 6400-6410 ◽  
Author(s):  
Astrid Drechsler ◽  
Alla Synytska ◽  
Petra Uhlmann ◽  
Mahdy M. Elmahdy ◽  
Manfred Stamm ◽  
...  
Keyword(s):  
Salt Concentration ◽  
Silica Particles ◽  
Interaction Forces ◽  
Polyelectrolyte Brushes

Quantification of Silica Uptake by Alveolar Macrophages - An Emperical Scanning Electron Microprobe Method

1982 ◽  
Vol 40 ◽  
pp. 332-333
Author(s):  
V. V. Damiano ◽  
R. P. Daniele ◽  
H. T. Tucker ◽  
J. H. Dauber
Keyword(s):  
Quantitative Analysis ◽  
Alveolar Macrophages ◽  
Bulk Sample ◽  
Silica Particles ◽  
Empirical Method ◽  
Phagocytic Cells ◽  
Calibration Standards ◽  
X Ray ◽  
Accurate Quantitative Analysis ◽  
Scanning Electron

An important example of intracellular particles is encountered in silicosis where alveolar macrophages ingest inspired silica particles. The quantitation of the silica uptake by these cells may be a potentially useful method for monitoring silica exposure. Accurate quantitative analysis of ingested silica by phagocytic cells is difficult because the particles are frequently small, irregularly shaped and cannot be visualized within the cells. Semiquantitative methods which make use of particles of known size, shape and composition as calibration standards may be the most direct and simplest approach to undertake. The present paper describes an empirical method in which glass microspheres were used as a model to show how the ratio of the silicon Kα peak X-ray intensity from the microspheres to that of a bulk sample of the same composition correlated to the mass of the microsphere contained within the cell. Irregular shaped silica particles were also analyzed and a calibration curve was generated from these data.

Sign in / Sign up

Export Citation Format

Share Document