Deposition Condition and Pinhole Defect Density of CrN[sub x] (1 ≧ x ≧ 0) Thin Films Formed by Ion-Beam-Enhanced Deposition

2003 ◽  
Vol 150 (2) ◽  
pp. B60 ◽  
Author(s):  
Hirotsugu Kondo ◽  
Noboru Akao ◽  
Nobuyoshi Hara ◽  
Katsuhisa Sugimoto
Keyword(s):  
Thin Films ◽  
Defect Density ◽  
Ion Beam ◽  
Deposition Condition

Effect of Assisted-Ion-Beam Gases on the Structure of Amorphous Silicon Thin Films Prepared by Ion-Beam-Assisted Sputtering

2016 ◽  
Vol 852 ◽  
pp. 1102-1107
Author(s):  
Jun Jun Huang ◽  
Cheng Mei Gui ◽  
Ming Ding ◽  
Di Fang Zhao ◽  
Cheng Liang Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Silicon ◽  
Defect Density ◽  
Ion Beam ◽  
Film Structure ◽  
Range Order ◽  
Thin Film Structure ◽  
Silicon Thin Films ◽  
Intermediate Range Order

In this work, amorphous silicon (a-Si) thin films were prepared by ion-beam-assisted sputtering, the effect of assisted-ion-beam gases on the thin-film structure were investigated using Raman spectroscopy, Fourier transform infrared spectroscopy, and spectroscopic ellipsometry. It was observed that the introduction of assisted-ion beam improved the thin-film structure, and the ion-beam-assisted sputtering a-Si thin films possessed higher short-range order, intermediate-range order, lower microstructure parameter (R*) and defect density of states with the increased of hydrogen concentration in the assisted-ion beam gases, which due to the transfer of energy from ion to the surface Si atoms and the formation of Si-H bonds in the a-Si thin films. The a-Si thin films deposited with hydrogen-ion beam possessed the absorption coefficient at 0.8 eV and microstructure factor of 0.7 cm-1 and 0.48. It was illumined that the device-quality a-Si thin films can be achieved under the ion-beam-assisted sputtering.

Structural characterization of highly textured AlN thin films grown on titanium

2010 ◽  
Vol 25 (3) ◽  
pp. 458-463 ◽  
Author(s):  
Gonzalo F. Iriarte
Keyword(s):  
Thin Films ◽  
Defect Density ◽  
Ion Beam ◽  
Bulk Acoustic Wave ◽  
Piezoelectric Response ◽  
Ion Beam Sputtering ◽  
Axis Orientation ◽  
Substrate Heating ◽  
Degree Of Orientation

A pulsed direct current (dc) reactive ion beam sputtering system has been used to synthesize highly c-axis oriented aluminum nitride (AlN) thin films on (0002)-oriented 200-nm thin titanium layers deposited on a Si-(111) substrate. After a systematic study of the processing variables, high-quality polycrystalline films with preferred c-axis orientation have been grown successfully on the Ti (0002) layer using an Al target under a N2/(N2 + Ar) ratio of 70%, a 2 mTorr processing pressure, and keeping the temperature of the substrate holder at ambient temperature (no substrate heating). The crystalline quality of the AlN and the underlaying Ti thin films was characterized by high-resolution x-ray diffraction. Best ω- full width at half maximum values of the (0002) reflection for 1-μm thin AlN layers are 0.56°. Hence, the AlN layers show a high degree of orientation in the (0002) direction, which directly translates into a high Q value piezoelectric response. Atomic force microscopy measurements were used to study the surface morphology of the Ti layer in an attempt to understand its impact on the quality of the AlN films deposited on top of them. Transmission electron microscopy cross-section analysis has been carried out to investigate the AlN/Ti interface. Our observations reveal the presence of crack-free layers with a smooth surface and extremely low defect density. Even local epitaxy phenomena have been identified at the AlN/Ti interface. The processing conditions used to synthesize AlN layers on Ti at room temperature are efficient in reducing the dislocation density and in-plane residual strain. Such AlN/Ti bilayers can be applied to manufacture novel electroacoustic device structures (such as bulk acoustic wave filters) on silicon substrates in further investigations.

Ion Beam Assisted Texture Evolution during Thin Film Deposition of Metal Nitrides

2000 ◽  
Vol 647 ◽  
Author(s):  
Bernd Stritzker ◽  
Jürgen W. Gerlach ◽  
Stephan Six ◽  
Bernd Rauschenbach
Keyword(s):  
Thin Films ◽  
Defect Density ◽  
Texture Evolution ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Crystalline Quality ◽  
Ion Energy ◽  
Ion Beam Assisted Deposition ◽  
Nitrogen Ion

AbstractIon beam assisted deposition, i.e., the bombardment of thin films with a beam of energetic particles has become a highly developed tool for the preparation of thin films. This technique provides thin films and coatings with modified microstructure and properties. In this paper examples are presented for the modifying of the structure: in-situ modification of texture during ion beam assisted film growth and ion beam enhanced epitaxy.The biaxial alignment of titanium nitride films prepared on Si(111) by nitrogen ion beam assisted deposition at room temperature was studied. The bombardment perpendicular to the surface of the substrate causes an {001} alignment of crystallites. A 55° ion beam incidence angle produces both a {111} orientation relative to the surface and a {100} orientation relative to the ion beam. This results in a totally fixed orientation of the crystallites. The texture evolution is explained by the existence of open channeling directions.Epitaxial, hexagonal gallium nitride films were grown on c-plane sapphire by low-energy nitrogen ion beam assisted deposition (≤ 25 eV). The ion energy was chosen to be less than the corrected bulk displacement energy to avoid the formation of ion-induced point defects in the bulk. The results show that GaN films with a nearly perfect {0002} texture are formed which have superior crystalline quality than films grown without ion irradiation. The mosaicity and the defect density are reduced.By applying an assisting ion beam during pulsed laser deposition of aluminum nitride on the c-plane of sapphire, epitaxial, hexagonal films could be produced. The results prove the beneficial influence of the ion beam on the crystalline quality of the films. An optimum ion energy of 500 eV was found where the medium tilt as well as the medium twist of the crystallites was minimal.

Pinhole Defect Density of CrN[sub x] Thin Films Formed by Ion-Beam-Enhanced Deposition on Stainless Steel Substrates

2007 ◽  
Vol 154 (4) ◽  
pp. C189 ◽  
Author(s):  
Hiroshi Goto ◽  
Noboru Akao ◽  
Nobuyoshi Hara ◽  
Katsuhisa Sugimoto
Keyword(s):  
Thin Films ◽  
Stainless Steel ◽  
Defect Density ◽  
Ion Beam ◽  
Steel Substrates

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

Preparation of thin films of (Tb,Dy)Fe2 giant magnetostrictive alloy by ion beam sputtering process.

1996 ◽  
Vol 8 (1/2) ◽  
pp. 27-28
Author(s):  
Mitsuhiro WADA ◽  
Yoshihito MATSUMURA ◽  
Hirohisa UCHIDA ◽  
Haru-Hisa UCHIDA ◽  
Hideo KANEKO
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering
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