Metrology and characterization of application specific chemical mechanical polishing pads

2005 ◽  
Vol 23 (5) ◽  
pp. 1392-1399
Author(s):  
Parshuram B. Zantye ◽  
S. Mudhivarthi ◽  
Ashok Kumar ◽  
Yaw Obeng
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Specific Chemical ◽  
Polishing Pads ◽  
Application Specific

Characterization and Control of Copper CMP with Optoacoustic Metrology

2001 ◽  
Vol 671 ◽  
Author(s):  
Michael Gostein ◽  
Paul Lefevre ◽  
Alex A. Maznev ◽  
Michael Joffe
Keyword(s):  
Film Thickness ◽  
Spatial Resolution ◽  
Chemical Mechanical Polishing ◽  
High Spatial Resolution ◽  
Mechanical Polishing ◽  
Length Measurement ◽  
And Control ◽  
Non Destructive

ABSTRACTWe discuss applications of optoacoustic film thickness metrology for characterization of copper chemical-mechanical polishing (CMP). We highlight areas where the use of optoacoustics for CMP characterization provides data complementary to that obtained by other techniques because of its ability to directly measure film thickness with high spatial resolution in a rapid, non-destructive manner. Examples considered include determination of planarization length, measurement of film thickness at intermediate stages of polish, and measurement of arrays of metal lines.

Nonlinear Dependence of Cu Dishing Depth on the Microstructure of Polishing Pads during Chemical Mechanical Polishing

2009 ◽  
Vol 156 (7) ◽  
pp. H535
Author(s):  
Te-Ming Kung ◽  
Chuan-Pu Liu ◽  
Shih-Chieh Chang ◽  
Kei-Wei Chen ◽  
Ying-Lang Wang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Nonlinear Dependence ◽  
Polishing Pads

Effect of Polishing Pad Material Properties on Chemical Mechanical Polishing (Cmp) Processes

1994 ◽  
Vol 337 ◽  
Author(s):  
Rajeev Bajaj ◽  
Mukesh Desai ◽  
Rahul Jairath ◽  
Matthew Stell ◽  
Robert Tolles
Keyword(s):  
Material Properties ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Cellular Structure ◽  
Mechanical Response ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Cold Flow ◽  
Polymer Properties ◽  
Polishing Pads

ABSTRACTChemical mechanical polishing (CMP) technology has successfully met the stringent requirements of ultraplanarized surfaces in semiconductor manufacture. Commonly, polyurethane based pads have been used to achieve this level of planarization. Recent studies have shown that the material properties of polishing pads used in the CMP process strongly influence the ability to reduce topography. In addition, past work has shown that in the absence of pad regeneration, polishing rate drops dramatically with polishing time. This decrease in material removal rate is believed to coincide with deterioration of the pad surface due to “cold flow” and/or “caking” of the pad material. This study attempts to correlate the intrinsic polymer properties and cellular structure of the pad material to CMP process indices like polishing rate and planarity. For example, the drop off in removal rate as a function of time can be attributed to the mechanical response of polyurethanes under conditions of critical shear. Moreover, planarity achieved is a function of pad stiffness - which itself is dependant upon intrinsic polymer stiffness and cell density.

Frictional Characterization of Chemical–Mechanical Polishing Pad Surface and Diamond Conditioner Wear

2008 ◽  
Vol 47 (8) ◽  
pp. 6282-6287 ◽  
Author(s):  
Yohei Yamada ◽  
Masanori Kawakubo ◽  
Osamu Hirai ◽  
Nobuhiro Konishi ◽  
Syuhei Kurokawa ◽  
...  
Keyword(s):  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Polishing Pad ◽  
Diamond Conditioner
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