Cl[sub 2]/Ar High-Density-Plasma Damage in GaN Schottky Diodes

2000 ◽  
Vol 147 (2) ◽  
pp. 719 ◽  
Author(s):  
A. P. Zhang ◽  
G. Dang ◽  
F. Ren ◽  
X. A. Cao ◽  
H. Cho ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
High Density ◽  
Plasma Damage ◽  
Density Plasma

High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges

1999 ◽  
Vol 595 ◽  
Author(s):  
A.P. Zhang ◽  
G. Dang ◽  
F. Ren ◽  
X.A. Cao ◽  
H. Cho ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
High Density ◽  
Plasma Damage ◽  
Source Power ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Self Bias ◽  
Density Plasma

AbstractThe effects of dc chuck self-bias and high density source power (which predominantly control ion energy and ion flux, respectively) on the electrical properties of n-GaN Schottky diodes exposed to Inductively Coupled Plasma of Cl2/Ar were examined. Both parameters were found to influence the diode performance, by reducing the reverse breakdown voltage and Schottky barrier height. All plasma conditions were found to produce a nitrogen-deficient surface, with a typical depth of the non-stoichiometry being ∼500 Å. Post-etch annealing was found to partially restore the diode characteristics.

scholarly journals High Density Plasma Damage Induced in n-GaN Schottky Diodes Using Cl2/Ar Discharges

2000 ◽  
Vol 5 (S1) ◽  
pp. 831-837
Author(s):  
A.P. Zhang ◽  
G. Dang ◽  
F. Ren ◽  
X.A. Cao ◽  
H. Cho ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
High Density ◽  
Plasma Damage ◽  
Source Power ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Self Bias ◽  
Density Plasma

The effects of dc chuck self-bias and high density source power (which predominantly control ion energy and ion flux, respectively) on the electrical properties of n-GaN Schottky diodes exposed to Inductively Coupled Plasma of Cl2/Ar were examined. Both parameters were found to influence the diode performance, by reducing the reverse breakdown voltage and Schottky barrier height. All plasma conditions were found to produce a nitrogen-deficient surface, with a typical depth of the non-stoichiometry being ∼ 500 Å. Post-etch annealing was found to partially restore the diode characteristics.

RF Plasma CVD Using Hollow Cathode Discharge

1988 ◽  
Vol 129 ◽  
Author(s):  
Shin Araki ◽  
Hideki Kamaji ◽  
Kazuo Norimoto
Keyword(s):  
Hollow Cathode ◽  
Low Pressure ◽  
High Density ◽  
Hollow Cathode Discharge ◽  
Rf Plasma ◽  
High Deposition Rate ◽  
Plasma Cvd ◽  
Plasma Damage ◽  
Discharge Electrode ◽  
Density Plasma

ABSTRACTWe have made a-Si photoreceptors at low pressure to prevent the formation of SimHn powders and by separating the growing surface from the high density plasma. A new plasma CVD method using a hollow-cathode discharge, where the discharge electrode is the cathode, is described. There is a hollow region in the discharge electrode. Hollow-cathode discharge enables a high density plasma to form at low pressure. The gas is decomposed in the hollow cathode preventing plasma damage to the film. This method allows us to achieve a high deposition rate (10 µm/h) and good quality films for photoreceptors.

Impact of Metal Pad Etch-Induced Plasma Damage on Dynamic Retention Time Degradation during High Temperature Stress in High Density DRAM Technology

2005 ◽  
Author(s):  
D-J Kim ◽  
I-G Kim ◽  
J-Y Noh ◽  
H-J Lee ◽  
S-H Park ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
Retention Time ◽  
High Temperature Stress ◽  
High Density ◽  
Cell Junction ◽  
Antenna Effect ◽  
Plasma Damage ◽  
Root Cause ◽  
Wafer Processing

Abstract As DRAM technology extends into 12-inch diameter wafer processing, plasma-induced wafer charging is a serious problem in DRAM volume manufacture. There are currently no comprehensive reports on the potential impact of plasma damage on high density DRAM reliability. In this paper, the possible effects of floating potential at the source/drain junction of cell transistor during high-field charge injection are reported, and regarded as high-priority issues to further understand charging damage during the metal pad etching. The degradation of block edge dynamic retention time during high temperature stress, not consistent with typical reliability degradation model, is analyzed. Additionally, in order to meet the satisfactory reliability level in volume manufacture of high density DRAM technology, the paper provides the guidelines with respect to plasma damage. Unlike conventional model as gate antenna effect, the cell junction damage by the exposure of dummy BL pad to plasma, was revealed as root cause.

Control of high-density plasma sources for CVD and etching

Vacuum ◽  
1997 ◽  
Vol 48 (7-9) ◽  
pp. 659-664 ◽  
Author(s):  
K Suzuki ◽  
H Sugai ◽  
K Nakamura ◽  
TH Ahn ◽  
M Nagatsu
Keyword(s):  
High Density ◽  
Plasma Sources ◽  
Density Plasma
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