Selective Chemical Vapor Deposition of Smooth Aluminum Films from Highly Supersaturated Source Gas

1999 ◽  
Vol 146 (11) ◽  
pp. 4111-4117 ◽  
Author(s):  
Takao Amazawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Aluminum Films ◽  
Selective Chemical

Using Self-assembly and Selective Chemical Vapor Deposition for Precise Positioning of Individual Germanium Nanoparticles on Hafnia

2006 ◽  
Vol 921 ◽  
Author(s):  
Shawn S Coffee ◽  
Wyatt A Winkenwerder ◽  
Scott K Stanley ◽  
Shahrjerdi Davood ◽  
Sanjay K Banerjee ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Self Assembly ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Pore Density ◽  
Hot Wire ◽  
Precise Positioning ◽  
Selective Chemical

AbstractGermanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ~20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b-methyl methacrylate) diblock copolymer was employed to pattern the SiO2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO2 pore walls.

Selective chemical vapor deposition of tungsten for microelectromechanical structures

1989 ◽  
Vol 20 (1-2) ◽  
pp. 123-133 ◽  
Author(s):  
N.C. Macdonald ◽  
L.Y. Chen ◽  
J.J. Yao ◽  
Z.L. Zhang ◽  
J.A. McMillan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Chemical

Consecutive and Selective Chemical Vapor Deposition of Pt/Al Bilayer Electrodes for TiO2Resistive Switching Memory

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC08 ◽  
Author(s):  
Heejung Park ◽  
Seunghee Go ◽  
Chiyoung Lee ◽  
Hoseok Nam ◽  
Jong-Kwon Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Chemical ◽  
Switching Memory

Initial Stage of Laser-Induced Selective Chemical Vapor Deposition of Silicon

1987 ◽  
Vol 26 (Part 1, No. 12) ◽  
pp. 2057-2060 ◽  
Author(s):  
Takeshi Tanaka ◽  
Koji Deguchi ◽  
Masataka Hirose
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Initial Stage ◽  
Selective Chemical

Interfacial Tunnel Structures In Cmos Source/Drain Regions Following Selective Deposition of Tungsten

1986 ◽  
Vol 71 ◽  
Author(s):  
J.M. Deblasi ◽  
D.K. Sadana ◽  
M.H. Norcott
Keyword(s):  
Chemical Vapor Deposition ◽  
Ion Implantation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Deposition ◽  
Selective Chemical ◽  
Crystallographic Defects

AbstractThe influence of B and As ion implantation on the location and density of interfacial tunnels, the extent of lateral encroachment, the amount of silicon consumed, and the crystallographic defects in CMOS source/drain structures following selective chemical vapor deposition of tungsten has been characterized.

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