Oxygen Precipitation Behavior in 300 mm Polished Czorchralski Silicon Wafers

1999 ◽  
Vol 146 (10) ◽  
pp. 3807-3811 ◽  
Author(s):  
T. Ono ◽  
G. A. Rozgonyi ◽  
C. Au ◽  
T. Messina ◽  
R. K. Goodall ◽  
...  
Keyword(s):  
Silicon Wafers ◽  
Precipitation Behavior ◽  
Oxygen Precipitation

The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior

1998 ◽  
Vol 510 ◽  
Author(s):  
R. Falster ◽  
D. Gambaro ◽  
M. Olmo ◽  
M. Cornara ◽  
H. Korb
Keyword(s):  
Silicon Wafer ◽  
Integrated Circuit ◽  
Defect Formation ◽  
Electronic Device ◽  
Vacancy Concentration ◽  
Silicon Wafers ◽  
Precipitation Behavior ◽  
Oxygen Precipitation ◽  
Profile Control ◽  
Zone Depth

AbstractA new kind of silicon wafer and a new class of materials engineering techniques for silicon wafers is described. This wafer, called the “Magic Denuded Zone” or MDZ wafer, is produced through the manipulation of the vacancy concentration and, in particular, vacancy concentration depth profiles in the wafer prior to the development of oxygen precipitates in subsequent heat treatments. The result is a wafer with ideal oxygen precipitation behavior for use in all types of integrated circuit applications. The methods used to prepare such wafers combine Frenkel pair generation with injection and the use of surface sinks. Simulations of the vacancy profiles produced by these techniques are presented and discussed. It is shown that within the range of vacancy concentration accessible by these techniques (up to ca. 1013 cm−3) the rate and oxygen concentration dependence of oxygen clustering can be substantially modified. Such techniques can be used to precisely engineer unique and desirable oxygen-related defect performance in silicon wafers both in terms of distribution and rate of defect formation. One result of the application of such techniques is an ideally precipitating silicon wafer in which the resulting oxygen precipitate profile (denuded zone depth and bulk density of precipitates) is independent of the concentration of oxygen of the wafer, the details of the crystal growth process used to prepare the wafer and, to a very large extent, the details of thermal cycles used to process the wafer into an electronic device. Optimal, generic and reliable internal gettering performance is achieved in such a wafer

Effect of Rapid Thermal Annealing on Oxygen Precipitation Behavior in Silicon Wafers

2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3055-3062 ◽  
Author(s):  
Masanori Akatsuka ◽  
Masahiko Okui ◽  
Nobuyuki Morimoto ◽  
Koji Sueoka
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Precipitation Behavior ◽  
Oxygen Precipitation

Oxygen precipitation behavior in heavily arsenic doped silicon crystals

2017 ◽  
Vol 457 ◽  
pp. 325-330 ◽  
Author(s):  
Stephan Haringer ◽  
Daniela Gambaro ◽  
Maria Porrini
Keyword(s):  
Precipitation Behavior ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
Doped Silicon

Dependence of Mechanical Strength of Czochralski Silicon Wafers on the Temperature of Oxygen Precipitation Annealing

1997 ◽  
Vol 144 (3) ◽  
pp. 1111-1120 ◽  
Author(s):  
Koji Sueoka ◽  
Masanori Akatsuka ◽  
Hisashi Katahama ◽  
Naoshi Adachi
Keyword(s):  
Mechanical Strength ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Oxygen Precipitation

Vacancy Species Produced by Rapid Thermal Annealing of Silicon Wafers

2015 ◽  
Vol 242 ◽  
pp. 135-140 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicon Wafers ◽  
Density Profiles ◽  
Cooling Stage ◽  
Czochralski Silicon ◽  
Self Diffusion ◽  
Oxygen Precipitation ◽  
Oxide Precipitate ◽  
Precipitate Density

Rapid thermal annealing (RTA) of Czochralski silicon wafers at around 1260°C installs a depth profile of some vacancy species. Subsequent oxygen precipitation in such wafers is vacancy-assisted. The data on RTA-installed vacancy profiles - and the corresponding precipitate density profiles - suggest that there is a slow-diffusing vacancy species (Vs) along with two fast-diffusing species: a Watkins vacancy (Vw) manifested in irradiation experiments and fast vacancy (Vf) responsible for the high-T vacancy contribution into self-diffusion. The Vs species are lost during cooling stage of RTA, and the loss seems to occur by conversion of Vs into Vf followed by a quick out-diffusion of Vf. A model based on this scenario provides a good fit to the reported profiles of oxide precipitate density in RTA wafers for different values of TRTA and different cooling rates.

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