Influence of the preepitaxial annealing and polycrystalline silicon deposition processes on oxygen precipitation and internal gettering in N/N+(100) epitaxial silicon wafers

1989 ◽  
Vol 65 (5) ◽  
pp. 2078-2083
Author(s):  
W. Wijaranakula ◽  
J. H. Matlock
Keyword(s):  
Polycrystalline Silicon ◽  
Silicon Wafers ◽  
Epitaxial Silicon ◽  
Silicon Deposition ◽  
Oxygen Precipitation ◽  
Deposition Processes

Internal gettering heat treatments and oxygen precipitation in epitaxial silicon wafers

1986 ◽  
Vol 1 (5) ◽  
pp. 693-697 ◽  
Author(s):  
W. Wijaranakula ◽  
P.M. Burke ◽  
L. Forbes
Keyword(s):  
Heat Treatment ◽  
Heat Treatments ◽  
Silicon Wafers ◽  
Epitaxial Silicon ◽  
Zone Formation ◽  
Oxygen Precipitation ◽  
Heat Treated ◽  
The One

As-received P/P + (100) epitaxial silicon wafers were heat treated using the one-, two-, and three-step internal gettering heat treatment cycles in wet oxygen, dry oxygen, and nitrogen ambients. The results indicate that ambients have an effect on the growth of bulk defects and denuded zone formation in the epitaxial silicon wafers.

Enhanced Internal Gettering of Iron in n/n+ Epitaxial Silicon Wafer: Effect of High Temperature Rapid Thermal Annealing in Nitrogen Ambient

2015 ◽  
Vol 242 ◽  
pp. 218-223
Author(s):  
Peng Dong ◽  
Xing Bo Liang ◽  
Da Xi Tian ◽  
Xiang Yang Ma ◽  
De Ren Yang
Keyword(s):  
Silicon Wafer ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Enhancement Effect ◽  
Epitaxial Silicon ◽  
High Concentration ◽  
Oxygen Precipitation ◽  
Doped Silicon ◽  
The One

We report a strategy feasible for improving the internal gettering (IG) capability of iron (Fe) for n/n+ epitaxial silicon wafers using the heavily arsenic (As)-doped Czochralski (CZ) silicon wafers as the substrates. The n/n+ epitaxial silicon wafers were subjected to the two-step anneal of 650 °C/16 h + 1000 °C/16 h following the rapid thermal processing (RTP) at 1250 °C in argon (Ar) or nitrogen (N2) atmosphere. It is found that the prior RTP in N2 atmosphere exhibits much stronger enhancement effect on oxygen precipitation (OP) in the substrates than that in Ar atmosphere, thereby leading to a better IG capability of Fe contamination on the epitaxial wafer. In comparison with the RTP in Ar atmosphere, the one in N2 atmosphere injects not only vacancies but also nitrogen atoms of high concentration into the heavily As-doped silicon substrate. The co-action of vacancy and nitrogen leads to the enhanced OP in the substrate and therefore the better IG capability for the n/n+ epitaxial silicon wafer.

Oxygen Precipitation Studies for N-Type and Epitaxial Silicon Substrates During Simulated Cmos Cycles by Synchrotron Section Topography

1986 ◽  
Vol 71 ◽  
Author(s):  
T. Tuomi ◽  
S. Hahn ◽  
M. Tilli ◽  
C.-C. D. Wong ◽  
O. Borland
Keyword(s):  
Silicon Wafers ◽  
High Resistivity ◽  
Cmos Process ◽  
Silicon Substrates ◽  
Epitaxial Silicon ◽  
Oxygen Precipitation ◽  
Heavily Doped ◽  
Section Topography ◽  
Section Topographs

AbstractSynchrotron section topography is applied to the study of silicon wafers pulled out froma simulated advanced CMOS twin-tub process. Substrates are heavily doped with antimony and phosphorus. For comparison also high-resistivity samples are studied. Prior to epi deposition of arsenic doped layers some wafers are subjected to a three-step intrinsic gettering cycle.Section topographs show that in the lightly doped samples a denuded zone is formed by the CMOS process itself in contrast with the heavily doped ones in which the intrinsic gettering is needed.

Effect of pre- and postepitaxial deposition annealing on oxygen precipitation in silicon

1986 ◽  
Vol 1 (5) ◽  
pp. 698-704 ◽  
Author(s):  
W. Wijaranakula ◽  
P.M. Burke ◽  
L. Forbes ◽  
J.H. Matlock
Keyword(s):  
Deposition Process ◽  
Substrate Material ◽  
Silicon Wafers ◽  
Epitaxial Silicon ◽  
Oxygen Precipitation ◽  
Epitaxial Deposition ◽  
Oxide Precipitate

Substrate material used for fabrication of P/P + epitaxial silicon wafers was preannealed at 650 °C in nitrogen ambient prior to the epitaxial deposition process for various times up to 300 min. The substrate material originated from a characterized crystal ingot. The results show that annealing before epitaxial deposition can preserve oxide precipitate nuclei from dissolution during the epitaxial deposition process. Additional postepitaxial annealing at 750 °C further enhances the growth of bulk defects.

Gettering of iron impurities in p/p+ epitaxial silicon wafers with heavily boron‐doped substrates

1995 ◽  
Vol 66 (20) ◽  
pp. 2709-2711 ◽  
Author(s):  
Masaki Aoki ◽  
Toru Itakura ◽  
Nobuo Sasaki
Keyword(s):  
Silicon Wafers ◽  
Epitaxial Silicon ◽  
Boron Doped

Plasma-Initiated Laser Deposition of Polycrystalline and Monocrystalline Silicon Films

1983 ◽  
Vol 29 ◽  
Author(s):  
J. M. Gee ◽  
P. J. Hargis ◽  
M. J. Carr ◽  
D. R. Tallant ◽  
R. W. Light
Keyword(s):  
Polycrystalline Silicon ◽  
Monocrystalline Silicon ◽  
Laser Deposition ◽  
Laser Raman Spectroscopy ◽  
Epitaxial Silicon ◽  
Laser Raman ◽  
Laser Fluences ◽  
Transmission Electron ◽  
Plasma Species ◽  
Deposited Film

ABSTRACTIn this paper we report a new method of silicon deposition using the interaction between the radiation from a pulsed-ultraviolet excimer laser and the plasma species produced in a glow discharge in silane (SiH4). Examination of the deposited film by laser Raman spectroscopy and by transmission electron microscopy revealed that the morphology ranged from polycrystalline silicon at laser fluences of 0.13–0.17 J/cm2 to epitaxial silicon at fluences of 0.4–0.6 J/cm2 . Growth rates of 100 nm/min for polycrystalline silicon and 30 nm/min for monocrystalline silicon were achieved.

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