Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metallization

1999 ◽  
Vol 17 (1) ◽  
pp. 182 ◽  
Author(s):  
Xiaomeng Chen ◽  
Harry L. Frisch ◽  
Alain E. Kaloyeros ◽  
Barry Arkles ◽  
John Sullivan
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
Low Temperature Plasma ◽  
Temperature Plasma

Low-Temperature Plasma-Enahanced Chemical Vapor Deposition of Crystal Silicon Film from Dichlorosilane

2001 ◽  
Vol 40 (Part 1, No. 1) ◽  
pp. 44-48 ◽  
Author(s):  
Haiping Liu ◽  
Sughoan Jung ◽  
Yukihiro Fujimura ◽  
Chisato Fukai ◽  
Hajime Shirai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Low Temperature Plasma ◽  
Crystal Silicon ◽  
Temperature Plasma

scholarly journals Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromide for integrated circuitry copper metallization applications

1999 ◽  
Vol 14 (5) ◽  
pp. 2043-2052 ◽  
Author(s):  
Xiaomeng Chen ◽  
Gregory G. Peterson ◽  
Cindy Goldberg ◽  
Gerry Nuesca ◽  
Harry L. Frisch ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Tantalum Nitride ◽  
Process Window ◽  
Copper Metallization ◽  
Film Properties ◽  
Reaction Regime ◽  
Integrated Circuitry

A low-temperature (>450 °C) thermal chemical vapor deposition (CVD) process was developed for the growth of TaNxfrom the reaction of tantalum pentabromide, ammonia, and hydrogen. Studies of process reaction kinetics yielded two sequential rate-controlling steps, with an activation energy of 0.45 eV for the kinetically limited reaction regime. Additionally, a systematic design of experiments approach examined the effects of key process parameters, namely, substrate temperature, source temperature, and hydrogen and ammonia flows, on film properties. A wide CVD process window was established for nitrogen-rich amorphous TaNxwith contamination below 1 at.%. Film conformality was higher than 95% in nominally 0.30 μm, 4.5: 1 aspect ratio, trench structures.

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