Influence of Low-Temperature Chemical Vapor Deposited SiO[sub 2] Capping Layer Porosity on GaAs/AlGaAs Quantum Well Intermixing

1999 ◽  
Vol 3 (4) ◽  
pp. 196 ◽  
Author(s):  
P. N. K. Deenapanray
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Chemical Vapor ◽  
Quantum Well Intermixing ◽  
Capping Layer ◽  
Chemical Vapor Deposited

Enhancement Effect of Plasma Enhanced Chemical Vapor Deposited SiN Capping Layer on Dielectric Cap Quantum Well Disordering

1995 ◽  
Vol 34 (Part 2, No. 4A) ◽  
pp. L418-L421 ◽  
Author(s):  
Won Jun Choi ◽  
Seok Lee ◽  
Jingming Zhang ◽  
YongKim ◽  
Sang Kuk Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Chemical Vapor ◽  
Enhancement Effect ◽  
Capping Layer ◽  
Chemical Vapor Deposited

Control of the Intermixing of InGaAs/InGaAsP Quantum Well in Impurity Free Vacancy Disordering by Changing NH3 Flow Rate During the Growth of SiNx Capping Layer

1999 ◽  
Vol 607 ◽  
Author(s):  
W.J. Choi ◽  
H.T Yi ◽  
D.H. Woo ◽  
S. Lee ◽  
S.H. Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Quantum Well Intermixing ◽  
Capping Layer ◽  
Gas Ratio ◽  
Free Vacancy ◽  
Better Than ◽  
Reactive Gas

AbstractThe dependence of impurity free vacancy disordering (IFVD) of InGaAs/InGaAsP QW structure on the characteristics of dielectric capping layer was studied using SiNx film as capping layers. The characteristics of the SiNx capping layer were varied by changing the NH3 flow rate during SiNx deposition by plasma enhanced chemical vapor deposition (PECVD). The degree of quantum well intermixing (QWI) with SiNX capping layer grown at higher NH3 flow rate was larger than that with SiNx film grown at lower NH3 flow rate. This implies that QWI can be easily controlled by simply changing the reactive gas ratio in the growing process of SiN, capping layer. It was also shown that this method to control QWI is better than the method of using two different capping layers such as SiNx film and SiO2 film in order to get spatially selective QWI on the same substrate.

scholarly journals Low-Temperature Morphology Changes of Platinum Thin Films Deposited on Chemical-Vapor-Deposited Diamond Surfaces

Shinku ◽  
2003 ◽  
Vol 46 (9) ◽  
pp. 703-707
Author(s):  
Ken-ichi TSUJIMOTO ◽  
Satoshi MITANI ◽  
Tokuyuki TERAJI ◽  
Toshimichi ITO
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Chemical Vapor ◽  
Diamond Surfaces ◽  
Chemical Vapor Deposited ◽  
Morphology Changes
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