Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films

Miltiadis K. Hatalis; David W. Greve

doi:10.1063/1.341065

Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.341065 ◽

1988 ◽

Vol 63 (7) ◽

pp. 2260-2266 ◽

Cited By ~ 271

Author(s):

Miltiadis K. Hatalis ◽

David W. Greve

Keyword(s):

Low Temperature ◽

Amorphous Silicon ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Low Temperature Annealing ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Large grain polycrystalline silicon by low-temperature annealing of low-pressure chemical vapor deposited amorphous silicon films

Vacuum ◽

10.1016/0042-207x(89)90915-9 ◽

1989 ◽

Vol 39 (10) ◽

pp. 992

Keyword(s):

Low Temperature ◽

Amorphous Silicon ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Low Temperature Annealing ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films

Journal of Applied Physics ◽

10.1063/1.339924 ◽

1988 ◽

Vol 63 (5) ◽

pp. 1442-1447 ◽

Cited By ~ 105

Author(s):

Y. C. Tai ◽

C. H. Mastrangelo ◽

R. S. Muller

Keyword(s):

Thermal Conductivity ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Heavily Doped ◽

Polycrystalline Silicon Films

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Retardation of nucleation rate for grain size enhancement by deep silicon ion implantation of low‐pressure chemical vapor deposited amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.343327 ◽

1989 ◽

Vol 65 (10) ◽

pp. 4036-4039 ◽

Cited By ~ 72

Author(s):

I.‐W. Wu ◽

A. Chiang ◽

M. Fuse ◽

L. Öveçoglu ◽

T. Y. Huang

Keyword(s):

Grain Size ◽

Ion Implantation ◽

Amorphous Silicon ◽

Nucleation Rate ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Characterization of hydrogenation and dehydrogenation of post‐plasma treated low‐pressure chemical‐vapor‐deposited amorphous silicon films

Journal of Applied Physics ◽

10.1063/1.339258 ◽

1987 ◽

Vol 62 (9) ◽

pp. 3740-3746 ◽

Cited By ~ 5

Author(s):

Minoru Nakamura ◽

Toshiyuki Ohno ◽

Nobutake Konishi ◽

Kenji Miyata ◽

Norimasa Kamezawa

Keyword(s):

Amorphous Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Erratum: ‘‘Thermal conductivity of heavily doped low‐pressure chemical vapor deposited polycrystalline silicon films’’ [J. Appl. Phys. 63, 1442 (1988)]

Journal of Applied Physics ◽

10.1063/1.344503 ◽

1989 ◽

Vol 66 (7) ◽

pp. 3420-3420 ◽

Cited By ~ 4

Author(s):

Y. C Tai ◽

C. H. Mastrangelo ◽

R. S. Muller

Keyword(s):

Thermal Conductivity ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Heavily Doped ◽

Polycrystalline Silicon Films

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Thickness effects on microstructural evolution of low-pressure-chemical-vapor-deposited amorphous silicon films during excimer-laser-induced crystallization

Thin Solid Films ◽

10.1016/j.tsf.2005.07.304 ◽

2005 ◽

Vol 493 (1-2) ◽

pp. 185-191 ◽

Cited By ~ 1

Author(s):

In-Cha Hsieh ◽

Bing-Rui Wu ◽

Shui-Yang Lien ◽

Dong-Sing Wuu

Keyword(s):

Amorphous Silicon ◽

Excimer Laser ◽

Microstructural Evolution ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Induced Crystallization

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Annealing and oxidation behavior of low‐pressure chemical vapor deposited tungsten slicide layers on polycrystalline silicon gates

Journal of Applied Physics ◽

10.1063/1.339414 ◽

1987 ◽

Vol 62 (7) ◽

pp. 2830-2835 ◽

Cited By ~ 10

Author(s):

D. K. Sadana ◽

A. E. Morgan ◽

M. H. Norcott ◽

S. Naik

Keyword(s):

Polycrystalline Silicon ◽

Oxidation Behavior ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Influence of deposition pressure on the bulk and interface states in low pressure chemical vapor deposited polycrystalline silicon thin‐film transistors

Applied Physics Letters ◽

10.1063/1.111473 ◽

1994 ◽

Vol 64 (20) ◽

pp. 2709-2711 ◽

Cited By ~ 6

Author(s):

C. A. Dimitriadis ◽

D. H. Tassis ◽

N. A. Economou ◽

G. Giakoumakis

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Interface States ◽

Deposition Pressure ◽

Silicon Thin Film ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Current‐voltage characteristics ofn‐amorphous low‐pressure chemical vapor deposited silicon films onp‐crystalline silicon

Journal of Applied Physics ◽

10.1063/1.343614 ◽

1989 ◽

Vol 66 (12) ◽

pp. 5894-5900 ◽

Cited By ~ 1

Author(s):

N. Du ◽

S. Salkalachen ◽

J. Yao ◽

H. R. Froelich ◽

P. K. John ◽

...

Keyword(s):

Crystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Current Voltage ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Current Voltage Characteristics

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Crystallization of amorphous silicon films during low pressure chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.94080 ◽

1983 ◽

Vol 42 (9) ◽

pp. 835-837 ◽

Cited By ~ 58

Author(s):

E. Kinsbron ◽

M. Sternheim ◽

R. Knoell

Keyword(s):

Chemical Vapor Deposition ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Pressure Chemical

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