Electrical and spin resonance characteristics of low‐temperature plasma‐enhanced chemical‐vapor‐deposited SiO2

1989 ◽  
Vol 66 (10) ◽  
pp. 4702-4708 ◽  
Author(s):  
R. A. B. Devine
Keyword(s):  
Low Temperature ◽  
Chemical Vapor ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Spin Resonance ◽  
Chemical Vapor Deposited

Electrical Characterization of Low Temperature PECVD Oxides for TSV Applications

2018 ◽  
Vol 2018 (1) ◽  
pp. 000728-000733
Author(s):  
Piotr Mackowiak ◽  
Rachid Abdallah ◽  
Martin Wilke ◽  
Jash Patel ◽  
Huma Ashraf ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Charge Densities ◽  
Doped Silicon

Abstract In the present work we investigate the quality of low temperature Plasma Enhanced Chemical Vapor Deposition (PECVD) and plasma treated Tetraethyl orthosilicate (TEOS)-based TSV-liner films. Different designs of Trough Silicon Via (TSV) Test structures with 10μm and 20μm width and a depth of 100μm have been fabricated. Two differently doped silicon substrates have been used – highly p-doped and moderately doped. The results for break-through, resistivity and capacitance for the 20μm structures show a better performance compared to the 10μm structures. This is mainly due to increased liner thickness in the reduced aspect ratio case. Lower interface traps and oxide charge densities have been observed in the C-V measurements results for the 10μm structures.

Low-Temperature Plasma-Enahanced Chemical Vapor Deposition of Crystal Silicon Film from Dichlorosilane

2001 ◽  
Vol 40 (Part 1, No. 1) ◽  
pp. 44-48 ◽  
Author(s):  
Haiping Liu ◽  
Sughoan Jung ◽  
Yukihiro Fujimura ◽  
Chisato Fukai ◽  
Hajime Shirai ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Low Temperature Plasma ◽  
Crystal Silicon ◽  
Temperature Plasma
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