Control of the Intermixing of InGaAs/InGaAsP Quantum Well in Impurity Free Vacancy Disordering by Changing NH3 Flow Rate During the Growth of SiNx Capping Layer

1999 ◽  
Vol 607 ◽  
Author(s):  
W.J. Choi ◽  
H.T Yi ◽  
D.H. Woo ◽  
S. Lee ◽  
S.H. Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Quantum Well Intermixing ◽  
Capping Layer ◽  
Gas Ratio ◽  
Free Vacancy ◽  
Better Than ◽  
Reactive Gas

AbstractThe dependence of impurity free vacancy disordering (IFVD) of InGaAs/InGaAsP QW structure on the characteristics of dielectric capping layer was studied using SiNx film as capping layers. The characteristics of the SiNx capping layer were varied by changing the NH3 flow rate during SiNx deposition by plasma enhanced chemical vapor deposition (PECVD). The degree of quantum well intermixing (QWI) with SiNX capping layer grown at higher NH3 flow rate was larger than that with SiNx film grown at lower NH3 flow rate. This implies that QWI can be easily controlled by simply changing the reactive gas ratio in the growing process of SiN, capping layer. It was also shown that this method to control QWI is better than the method of using two different capping layers such as SiNx film and SiO2 film in order to get spatially selective QWI on the same substrate.

Influence of SiOx Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells

1999 ◽  
Vol 607 ◽  
Author(s):  
P.N.K. Deenapanray ◽  
H.H. Tan ◽  
C. Jagadish
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Capping Layer ◽  
Dielectric Layers ◽  
Free Vacancy

AbstractWe have investigated the influence of SiOx capping layer quality on impurity-free vacancy interdiffusion in GaAs/Al0.54Ga0.46As quantum wells. Dielectric layers were deposited by plasmaenhanced chemical vapor deposition, and properties of layers were changed by varying either the flow rate of silane or deposition temperature. The extent of intermixing in our samples is discussed in terms of the 0 content and incorporation of N in capping layers, and also on their porosity. We also report on the electrically active defects which are introduced in Si02 capped and annealed n-GaAs, and relate them to the intermixing process.

Reduced Al-Ga interdiffusion in GaAs/AlGaAs multiple quantum well structure by introducing low hydrogen content SiNx capping layer for dielectric cap quantum well disordering

1997 ◽  
Vol 484 ◽  
Author(s):  
W. J. Choi ◽  
S. M. Han ◽  
S. I. Shah ◽  
S. G. Choi ◽  
D. H. Woo ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Quantum Well ◽  
Flow Rate ◽  
Hydrogen Content ◽  
Vapor Deposition ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Energy Shift ◽  
Multiple Quantum ◽  
Capping Layer

AbstractDielectric cap quantum well disordering (DCQWD) of GaAs/AlGaAs multiple quantum well (MQW) structure was carried out by using SiNx. capping layer grown by plasma enhanced chemical vapor deposition (PECVD). By varying the NH3 flow rate with fixed SiH4 flow rate during the SiNx. growth, the characteristics of the capping film were varied. There was an increase in the energy shift of quantum well photoluminescence (PL) peak after thermal treatment of the samples with rapid thermal annealing (RTA) as the NH3 flow rate was increased, although the thickness of SiNx decreased. This is thought to be due to the increase of hydrogen content in SiNx. film grown at higher NH3 flow rate.

EFFECT OF CAPPING LAYER ON InxGa1-xN QUANTUM DOTS GROWN USING NNAD METHOD BY MOCVD

2009 ◽  
Vol 08 (01n02) ◽  
pp. 197-201
Author(s):  
HEON SONG ◽  
R. NAVAMATHAVAN ◽  
SEONG-MUK JEONG ◽  
SEON-HO LEE ◽  
JIN-SU KIM ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Capping Layer ◽  
Nitridation Time ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

In x Ga 1-x N quantum dots (QDs) were grown on GaN epitaxy using nitridation of nano-alloyed droplet (NNAD) method by metal-organic chemical vapor deposition (MOCVD) system. Before the In x Ga 1-x N QDs formation, In + Ga droplets were initially formed by the flow of TMI and TMG, which acts as a nucleation seed for the QDs growth. Density of the alloy droplets was increased with the increasing flow rate; however, droplet size was scarcely changed about 100–200 nm by flow rate. And In x Ga 1-x N QDs size can be easily changed by controlling the nitridation time or various factors. Also, the influence of GaN capping layer on the properties of In x Ga 1-x N QDs was discussed.

GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

1998 ◽  
Vol 3 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
A. Rybaltowski ◽  
Xiaolong Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Well ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multi Quantum Well ◽  
Metalorganic Chemical

We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 μm long cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Ω at 300 and 79 K, respectively.

Optical Diagnostics of Microstructures Fabricated Using Quantum Well Intermixing

1999 ◽  
Vol 607 ◽  
Author(s):  
A. Saher Helmy ◽  
A.C. Bryce ◽  
C.N. Ironside ◽  
J.S. Aitchison ◽  
J.H. Marsh ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Quantum Well ◽  
Spatial Resolution ◽  
Optical Diagnostics ◽  
Complete Suppression ◽  
Quantum Well Intermixing ◽  
Spatially Resolved ◽  
Non Destructive ◽  
Insight Into ◽  
Free Vacancy

AbstractIn this paper we shall discuss techniques for accurate, non-destructive, optical characterisation of structures fabricated using quantum well intermixing (QWI). Spatially resolved photoluminescence and Raman spectroscopy were used to characterise the lateral bandgap profiles produced by impurity free vacancy disordering (IFVD) technology. Different features were used to examine the spatial resolution of the intermixing process. Features include 1:1 gratings as well as isolated stripes. From the measurements, the spatial selectivity of IFVD could be identified, and was found to be ∼4.5 μm, in contrast with the spatial resolution of the process of sputtering induced intermixing, which was found to be ∼2.5 μm. In addition, PL measurements on 1:1 gratings fabricated using IFVD show almost complete suppression of intermixing dielectric cap gratings with periods less than 10 microns. Finally, some insight into the limitations and merits of PL and Raman for the precision characterisation of QWI will be presented.

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