(Invited) Low-Temperature Processed InGaZnO MES-FET for Flexible Device Applications

2017 ◽  
Vol 79 (1) ◽  
pp. 43-48 ◽  
Author(s):  
Mamoru Furuta ◽  
Yusaku Magari ◽  
Shinsuke Hashimoto ◽  
Kenichiro Hamada
Keyword(s):  
Low Temperature ◽  
Flexible Device ◽  
Device Applications

scholarly journals The improvement of CoZrTaB thin films on different substrates for flexible device applications

AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 025139
Author(s):  
Yanze Wu ◽  
I-Chen Yeng ◽  
Hongbin Yu
Keyword(s):  
Thin Films ◽  
Flexible Device ◽  
Device Applications

Ambient atmosphere-processable, printable Cu electrodes for flexible device applications: structural welding on a millisecond timescale of surface oxide-free Cu nanoparticles

Nanoscale ◽  
2015 ◽  
Vol 7 (9) ◽  
pp. 3997-4004 ◽  
Author(s):  
Sang-Jin Oh ◽  
Yejin Jo ◽  
Eun Jung Lee ◽  
Sun Sook Lee ◽  
Young Hun Kang ◽  
...  
Keyword(s):  
Surface Oxide ◽  
Ambient Atmosphere ◽  
Cu Nanoparticles ◽  
Flexible Device ◽  
Device Applications ◽  
Cu Nanoparticle ◽  
Paper Substrates

We demonstrate Cu nanoparticle-derived printed conductive structures on plastic and paper substrates in air.

Sulfurization Engineering of One‐Step Low‐Temperature MoS 2 and WS 2 Thin Films for Memristor Device Applications

2021 ◽  
pp. 2100515
Author(s):  
Yuqian Gu ◽  
Martha I. Serna ◽  
Sivasakthya Mohan ◽  
Alejandra Londoño‐Calderon ◽  
Taimur Ahmed ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Device Applications ◽  
One Step ◽  
Memristor Device

Low Temperature Oxide Deposition Equipment

1977 ◽  
Vol 14 (2) ◽  
pp. 125-128
Author(s):  
T. E. Price
Keyword(s):  
Low Temperature ◽  
Silicon Dioxide ◽  
Chemical Reactions ◽  
Oxide Deposition ◽  
Device Applications ◽  
Temperature Oxide

The equipment described uses silane to deposit silicon dioxide at 400°C on to a substrate 50 mm in diameter; the oxide may be doped with phosphorus or boron. Details are given of the chemical reactions involved, the construction and operation together with some examples of possible device applications.

Dilute Al-Mn Alloys for Low-Temperature Device Applications

2004 ◽  
Vol 134 (3/4) ◽  
pp. 973-984 ◽  
Author(s):  
S. T. Ruggiero ◽  
A. Williams ◽  
W. H. Rippard ◽  
A. Clark ◽  
S. W. Deiker ◽  
...  
Keyword(s):  
Low Temperature ◽  
Device Applications

Device Applications of Low-Temperature-Grown GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Frank W. Smith
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
High Speed ◽  
Gate Insulator ◽  
Metal Insulator ◽  
Unique Material ◽  
Device Applications ◽  
Effect Transistor ◽  
Commercial Applications ◽  
Microwave Switch

ABSTRACTLow-temperature-grown (LTG) GaAs is a unique material that has been used in a variety of device applications to achieve record performance. LTG GaAs used as a buffer layer eliminates sidegating and backgating and in GaAs integrated circuits. Record output power density (1.57 W/mm) and superior microwave-switch performance were demonstrated when LTG GaAs was used at a gate insulator in a metal-insulator-semiconductor field-effect transistor. High-speed (0.5 ps) and high-voltage (1 kV) LTG GaAs photoconductive switches have also been demonstrated. Using the same material, researchers have demonstrated highresponsivity (0.1 A/W), wide-bandwidth (∼ 375 GHz) LTG GaAs photodetectors. Devices incorporating LTG GaAs are currently being optimized for systems applications. LTG GaAs technology can enhance system performance and enable new systems for military and commercial applications in the areas of radar, communications, instrumentation, and highspeed computing.

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