Device Applications of Low-Temperature-Grown GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Frank W. Smith
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
High Speed ◽  
Gate Insulator ◽  
Metal Insulator ◽  
Unique Material ◽  
Device Applications ◽  
Effect Transistor ◽  
Commercial Applications ◽  
Microwave Switch

ABSTRACTLow-temperature-grown (LTG) GaAs is a unique material that has been used in a variety of device applications to achieve record performance. LTG GaAs used as a buffer layer eliminates sidegating and backgating and in GaAs integrated circuits. Record output power density (1.57 W/mm) and superior microwave-switch performance were demonstrated when LTG GaAs was used at a gate insulator in a metal-insulator-semiconductor field-effect transistor. High-speed (0.5 ps) and high-voltage (1 kV) LTG GaAs photoconductive switches have also been demonstrated. Using the same material, researchers have demonstrated highresponsivity (0.1 A/W), wide-bandwidth (∼ 375 GHz) LTG GaAs photodetectors. Devices incorporating LTG GaAs are currently being optimized for systems applications. LTG GaAs technology can enhance system performance and enable new systems for military and commercial applications in the areas of radar, communications, instrumentation, and highspeed computing.

Low-temperature buffer AlInAs/GaInAs on InP HEMT technology for ultra-high-speed integrated circuits

2003 ◽  
Author(s):  
A.S. Brown ◽  
C.S. Chou ◽  
M.J. Delaney ◽  
C.E. Hooper ◽  
J.F. Jensen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
High Speed ◽  
Ultra High Speed ◽  
Inp Hemt

SINGLE-EVENT EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS

2004 ◽  
Vol 14 (02) ◽  
pp. 311-325 ◽  
Author(s):  
DALE McMORROW ◽  
JOSEPH S. MELINGER ◽  
ALVIN R. KNUDSON
Keyword(s):  
Energy Transfer ◽  
Integrated Circuits ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistor ◽  
Single Event Upset ◽  
Single Event ◽  
Single Event Effects ◽  
Semiconductor Electronics ◽  
Effect Transistor

Single-event effects are a serious concern for high-speed III-V semiconductor devices operating in radiation-intense environments. GaAs integrated circuits (ICs) based on field effect transistor technology exhibit single-event upset sensitivity to protons and very low linear energy transfer (LET) particles. The current understanding of single-event effects in III-V circuits and devices, and approaches for mitigating their impact, are discussed.

Fabrication of 0.1 µm channel diamond Metal-Insulator-Semiconductor Field-Effect Transistor

2001 ◽  
Vol 680 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Yoshikazu Ohba ◽  
Hiroaki Ishizaka ◽  
Takuya Arima ◽  
Hirotada Taniuchi ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Insulator ◽  
Short Channel ◽  
Threshold Voltage Shift ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Voltage Shift ◽  
Effect Transistor

ABSTRACTAnalysis of diamond short channel effect is carried out for the first time. 70 nm channel diamond metal-insulator semiconductor field-effect transistor is realized by utilizing new FET fabrication process on the hydrogen-terminated surface conductive layer. This FET is the shortest gate length in diamond FETs. FETs with thick gate insulator of 35 nm show significant threshold voltage shift and degradation of subthreshold slope S by the gate refining. This phenomenon occurs due to the penetration of drain field into channel. However, the degradation of subthreshold performance and threshold voltage shift are hardly observed in 0.17 µm FET with thin gate insulator 15 nm in thickness.

LARGE AREA GaN METAL SEMICONDUCTOR METAL (MSM) PHOTODIODE USING A THIN LOW TEMPERATURE GaN CAP LAYER

2008 ◽  
Vol 17 (01) ◽  
pp. 59-69 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN ◽  
C. W. CHIN ◽  
S. M. THAHAB
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Dark Current ◽  
High Speed ◽  
Distributed Data ◽  
Large Area ◽  
Device Structure ◽  
Metal Semiconductor Metal ◽  
Large Active Area ◽  
Schottky Photodiode

Small area metal semiconductor metal (MSM) photodiode (PD) has been one of the most favoured detector choices for high speed optoelectronics integrated circuits due to their low parasitic capacitance and simple planar device structure, which is compatible with FETs. Large MSM PDs, on the other hand, can also be useful in many network and interconnect applications such as fibre distributed data interfaces. An MBE grown GaN metal semiconductor metal photodiode with a thin low temperature GaN (50nm) barrier enhancement layer is reported, which has low dark current. The detector using Nickel ( Ni ) Schottky metal fingers with 400 μm spacing on a large active area exhibit a low dark current of 1.23 mA at 10 V bias, which is about three orders of magnitude lower than that of the normal GaN Schottky photodiode.

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