Performance Enhancement of Metal Floating Gate Memory by Using a Bandgap Engineered High-k Tunneling Barrier

2016 ◽  
Vol 72 (2) ◽  
pp. 51-55
Author(s):  
D. Jiang ◽  
L. Jin ◽  
Z. Xia ◽  
G. Chen ◽  
X. Zou ◽  
...  
Keyword(s):  
Performance Enhancement ◽  
Floating Gate ◽  
Tunneling Barrier ◽  
High K ◽  
Floating Gate Memory

High-k dielectrics for hybrid floating gate memory applications

2012 ◽  
Vol 1430 ◽  
Author(s):  
J.G. Lisoni ◽  
L. Breuil ◽  
P. Blomme ◽  
J. Van Houdt
Keyword(s):  
Dielectric Constant ◽  
Metal Layer ◽  
Device Fabrication ◽  
Floating Gate ◽  
High K ◽  
Interface Characteristics ◽  
Floating Gate Memory ◽  
Memory Applications ◽  
Intermetal Dielectric ◽  
Metal Layers

ABSTRACTWe report on the materials issues involved in the hybrid floating gate (HFG) device fabrication, where the interpoly dielectric is replaced by an intermetal dielectric (IMD). Indeed, in HFG the dielectric is inserted in between two metal layers in a metal\dielectric\metal stack. The materials of choice were TiN as the metal layer and Al2O3 and HfO2 (and their combination) as IMD. The program/erase performance is discussed based on the dielectric constant and crystallinity of the IMD and the metal-IMD interface characteristics.

scholarly journals Formation of SrTiO3 nanocrystals in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

2006 ◽  
Vol 89 (4) ◽  
pp. 043104 ◽  
Author(s):  
C. L. Yuan ◽  
P. Darmawan ◽  
Y. Setiawan ◽  
P. S. Lee ◽  
J. Ma
Keyword(s):  
Gate Dielectric ◽  
Floating Gate ◽  
High K ◽  
Floating Gate Memory ◽  
High K Gate Dielectric

Floating Gate Memory based on Ferritin Nanodots with High-k Gate Dielectrics

2008 ◽  
Author(s):  
K. Ohara ◽  
Y. Uraoka ◽  
T. Fuyuki ◽  
I. Yamashita ◽  
T. Yaegashi ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Floating Gate ◽  
High K ◽  
Floating Gate Memory
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