Investigation of Pore Diameter Modulation in Depth in p-type Silicon

2013 ◽  
Vol 50 (37) ◽  
pp. 3-11
Author(s):  
E. Ossei-Wusu ◽  
J. Carstensen ◽  
E. Quiroga-Gonzalez ◽  
M. Amirmaleki ◽  
H. Foll
Keyword(s):  
Pore Diameter ◽  
Type Silicon ◽  
P Type

scholarly journals Pore Morphology of Heavily Doped P-Type Porous Silicon

Proceedings ◽  
2018 ◽  
Vol 4 (1) ◽  
pp. 14 ◽  
Author(s):  
David Martín-Sánchez ◽  
Salvador Ponce-Alcántara ◽  
Jaime García-Rupérez
Keyword(s):  
Porous Silicon ◽  
Organic Solvent ◽  
Potassium Hydroxide ◽  
Pore Diameter ◽  
Strong Dependence ◽  
Pore Morphology ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Macropore Formation

Tuning the pore diameter of porous silicon (PS) is essential for some applications such as biosensing, where the pore size can filter the entrance of some analytes or increase its sensitivity. However, macropore (>50 nm) formation on p-type silicon is still poorly known due to the strong dependence on resistivity. Electrochemically etching heavily doped p-type silicon usually forms micropores (<5 nm), but it has been found that bigger sizes can be achieved by adding an organic solvent to the electrolyte. In this work, we present the results of using dimethylformamide (DMF), dimethylsulfoxide (DMSO), potassium hydroxide (KOH) and sodium hydroxide (NaOH) for macropore formation in p-type silicon with a resistivity between 0.001 and 0.02 Ω∙cm, achieving pore sizes from 5 to 100 nm.

The Role of Polyethylene Glycol in Pore Diameter Modulation in Depth in p-Type Silicon

2013 ◽  
Vol 2 (6) ◽  
pp. P243-P247 ◽  
Author(s):  
E. Ossei-Wusu ◽  
J. Carstensen ◽  
E. Quiroga-González ◽  
M. Amirmaleki ◽  
H. Föll
Keyword(s):  
Polyethylene Glycol ◽  
Pore Diameter ◽  
Type Silicon ◽  
P Type

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type

Modification of p-type Silicon for the Photoelectrochemical Reduction of CO2

2019 ◽  
Vol 19 (35) ◽  
pp. 1-7 ◽  
Author(s):  
Thomas Cottineau ◽  
Mario Morin ◽  
Daniel Bélanger
Keyword(s):  
Type Silicon ◽  
Reduction Of Co2 ◽  
P Type

Radiation damage in p-type silicon irradiated with neutrons and protons

2009 ◽  
Vol 599 (1) ◽  
pp. 60-65 ◽  
Author(s):  
Vladimir Cindro ◽  
Gregor Kramberger ◽  
Manuel Lozano ◽  
Igor Mandić ◽  
Marko Mikuž ◽  
...  
Keyword(s):  
Radiation Damage ◽  
Type Silicon ◽  
P Type

Surface charge transfer induced p-CdS nanoribbon/n-Si heterojunctions as fast-speed self-driven photodetectors

2015 ◽  
Vol 3 (24) ◽  
pp. 6307-6313 ◽  
Author(s):  
Chao Xie ◽  
Fangze Li ◽  
Longhui Zeng ◽  
Linbao Luo ◽  
Li Wang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Surface Charge ◽  
Fast Speed ◽  
Type Silicon ◽  
P Type

Heterojunctions composed of single p-type CdS nanoribbons (NRs) and n-type silicon (Si) were successfully fabricated and can be applied as fast-speed self-driven visible photodetectors.

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