The Role of Polyethylene Glycol in Pore Diameter Modulation in Depth in p-Type Silicon

2013 ◽  
Vol 2 (6) ◽  
pp. P243-P247 ◽  
Author(s):  
E. Ossei-Wusu ◽  
J. Carstensen ◽  
E. Quiroga-González ◽  
M. Amirmaleki ◽  
H. Föll
Keyword(s):  
Polyethylene Glycol ◽  
Pore Diameter ◽  
Type Silicon ◽  
P Type

Investigation of Pore Diameter Modulation in Depth in p-type Silicon

2013 ◽  
Vol 50 (37) ◽  
pp. 3-11
Author(s):  
E. Ossei-Wusu ◽  
J. Carstensen ◽  
E. Quiroga-Gonzalez ◽  
M. Amirmaleki ◽  
H. Foll
Keyword(s):  
Pore Diameter ◽  
Type Silicon ◽  
P Type

Defect states in Czochalski p-type silicon: the role of oxygen and dislocations

2005 ◽  
Vol 202 (5) ◽  
pp. 889-895 ◽  
Author(s):  
A. Castaldini ◽  
D. Cavalcoli ◽  
A. Cavallini ◽  
S. Pizzini
Keyword(s):  
Defect States ◽  
Type Silicon ◽  
P Type

scholarly journals Pore Morphology of Heavily Doped P-Type Porous Silicon

Proceedings ◽  
2018 ◽  
Vol 4 (1) ◽  
pp. 14 ◽  
Author(s):  
David Martín-Sánchez ◽  
Salvador Ponce-Alcántara ◽  
Jaime García-Rupérez
Keyword(s):  
Porous Silicon ◽  
Organic Solvent ◽  
Potassium Hydroxide ◽  
Pore Diameter ◽  
Strong Dependence ◽  
Pore Morphology ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type ◽  
Macropore Formation

Tuning the pore diameter of porous silicon (PS) is essential for some applications such as biosensing, where the pore size can filter the entrance of some analytes or increase its sensitivity. However, macropore (>50 nm) formation on p-type silicon is still poorly known due to the strong dependence on resistivity. Electrochemically etching heavily doped p-type silicon usually forms micropores (<5 nm), but it has been found that bigger sizes can be achieved by adding an organic solvent to the electrolyte. In this work, we present the results of using dimethylformamide (DMF), dimethylsulfoxide (DMSO), potassium hydroxide (KOH) and sodium hydroxide (NaOH) for macropore formation in p-type silicon with a resistivity between 0.001 and 0.02 Ω∙cm, achieving pore sizes from 5 to 100 nm.

scholarly journals Влияние центра EL2 на фотоотклик ансамбля радиальных нитевидных нанокристаллов GaAs/AlGaAs

2019 ◽  
Vol 45 (16) ◽  
pp. 37
Author(s):  
Н.Р. Григорьева ◽  
И.В. Штром ◽  
Р.В. Григорьев ◽  
И.П. Сошников ◽  
Р.Р. Резник ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Normal State ◽  
Silicon Substrate ◽  
Recovery Time ◽  
Molecular Beam ◽  
Bulk Crystal ◽  
Type Silicon ◽  
P Type

The role of EL2 defect in a formation of a photoresponse of an array of radial GaAs/AlGaAs nanowires (x=0.3) n-type grown by molecular beam epitaxy on a p-type silicon substrate was studied. A significant reduction in the recovery time of the photoresponse of nanowires was found in comparison with the bulk crystal during the transition of the EL2-center from the non-photoactive to the normal state.

Silicon Junction Profile Delineation by Anodic Etching in HF/HNO3/CH3COOH Solution

2013 ◽  
Author(s):  
Jeng-Han Lee ◽  
Y.M. Chen ◽  
C.M. Huang ◽  
F.Y. Tseng ◽  
C.J. Chen ◽  
...  
Keyword(s):  
Etching Rate ◽  
Experimental Results ◽  
Silicon Etching ◽  
Anodic Etching ◽  
Type Silicon ◽  
Positive Voltage ◽  
P Type

Abstract An anodic etching is used for silicon junction profile delineation. Experimental results show that the etching rate is determined by dopant type, of which P type silicon etching rate will be enhanced while the N type silicon become inactive when an external positive voltage is applied. The experiment verifies the role of holes on the silicon etching. The proposed method is applicable for exploring the profile of P+/N-well, N+/P-well, and N-well/P-well junctions, using the same recipe.

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