Surface charge transfer induced p-CdS nanoribbon/n-Si heterojunctions as fast-speed self-driven photodetectors

2015 ◽  
Vol 3 (24) ◽  
pp. 6307-6313 ◽  
Author(s):  
Chao Xie ◽  
Fangze Li ◽  
Longhui Zeng ◽  
Linbao Luo ◽  
Li Wang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Surface Charge ◽  
Fast Speed ◽  
Type Silicon ◽  
P Type

Heterojunctions composed of single p-type CdS nanoribbons (NRs) and n-type silicon (Si) were successfully fabricated and can be applied as fast-speed self-driven visible photodetectors.

Surface charge transfer doping induced inversion layer for high-performance graphene/silicon heterojunction solar cells

2017 ◽  
Vol 5 (1) ◽  
pp. 285-291 ◽  
Author(s):  
Ke Ding ◽  
Xiujuan Zhang ◽  
Feifei Xia ◽  
Rongbin Wang ◽  
Yawei Kuang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Transfer ◽  
Surface Charge ◽  
High Performance ◽  
Inversion Layer ◽  
Heterojunction Solar Cells ◽  
Device Efficiency ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

Surface charge transfer doping (SCTD) induced p-type inversion layer was implemented in the graphene/silicon heterojunction solar cells, leading to significant improvement of device efficiency.

Ambipolar and n/p-type conduction enhancement of two-dimensional materials by surface charge transfer doping

Nanoscale ◽  
2019 ◽  
Vol 11 (32) ◽  
pp. 15359-15366 ◽  
Author(s):  
Shuangqing Fan ◽  
Xiaodong Tang ◽  
Daihua Zhang ◽  
Xiaodong Hu ◽  
Jing Liu ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Surface Charge ◽  
Surface Functionalization ◽  
2D Materials ◽  
Two Dimensional ◽  
Two Dimensional Materials ◽  
P Type ◽  
Type Conduction

Through the surface functionalization of TPB, TTB and BCF, ambipolar, n and p-type doping is performed on seven 2D materials.

Ultrahigh Mobility of p-Type CdS Nanowires: Surface Charge Transfer Doping and Photovoltaic Devices

2012 ◽  
Vol 3 (5) ◽  
pp. 579-583 ◽  
Author(s):  
Fang-Ze Li ◽  
Lin-Bao Luo ◽  
Qing-Dan Yang ◽  
Di Wu ◽  
Chao Xie ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Surface Charge ◽  
Photovoltaic Devices ◽  
Cds Nanowires ◽  
P Type

Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II–VI Nanostructures

ACS Nano ◽  
2016 ◽  
Vol 10 (11) ◽  
pp. 10283-10293 ◽  
Author(s):  
Feifei Xia ◽  
Zhibin Shao ◽  
Yuanyuan He ◽  
Rongbin Wang ◽  
Xiaofeng Wu ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Transition Metal ◽  
Metal Oxides ◽  
Surface Charge ◽  
Transition Metal Oxides ◽  
P Type

Nonchemical n- and p-Type Charge Transfer Doping of FAPbI3 Perovskite

2021 ◽  
pp. 2817-2824
Author(s):  
Chunqing Ma ◽  
Bosung Kim ◽  
Dong-Ho Kang ◽  
Sang-Woo Kim ◽  
Nam-Gyu Park
Keyword(s):  
Charge Transfer ◽  
P Type

scholarly journals Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085005
Author(s):  
Kevin Lauer ◽  
Geert Brokmann ◽  
Mario Bähr ◽  
Thomas Ortlepp
Keyword(s):  
Pressure Sensors ◽  
Type Silicon ◽  
P Type
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