Analysis of Total Ionizing Dose Effects on a Pseudo-Static Random Access Memory (PSRAM)

2012 ◽  
Vol 49 (1) ◽  
pp. 69-76
Author(s):  
T. H. Both ◽  
G. I. Wirth ◽  
E. C. F. Pereira Junior ◽  
O. L. Goncalez ◽  
R. G. Vaz ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Total Ionizing Dose ◽  
Access Memory ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

scholarly journals Total ionizing dose effects on innovative silicon-on-insulator static random access memory cell

2019 ◽  
Vol 68 (16) ◽  
pp. 168501
Author(s):  
Shuo Wang ◽  
Yong-Wei Chang ◽  
Jing Chen ◽  
Ben-Yan Wang ◽  
Wei-Wei He ◽  
...  
Keyword(s):  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Silicon On Insulator ◽  
Static Random Access Memory ◽  
Total Ionizing Dose ◽  
Access Memory ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

scholarly journals Synergistic effects of total ionizing dose on the single event effect sensitivity of static random access memory

2014 ◽  
Vol 63 (1) ◽  
pp. 018501
Author(s):  
Xiao Yao ◽  
Guo Hong-Xia ◽  
Zhang Feng-Qi ◽  
Zhao Wen ◽  
Wang Yan-Ping ◽  
...  
Keyword(s):  
Synergistic Effects ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Single Event ◽  
Total Ionizing Dose ◽  
Access Memory ◽  
Single Event Effect

Analysis of FSRAM Single Bit Failures Due to Unique Dislocations

1998 ◽  
Author(s):  
Phil Schani ◽  
S. Subramanian ◽  
Vince Soorholtz ◽  
Pat Liston ◽  
Jamey Moss ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Temperature Sensitive ◽  
Wafer Level ◽  
Top Down ◽  
Access Memory ◽  
Transmission Electron ◽  
Contact Processing

Abstract Temperature sensitive single bit failures at wafer level testing on 0.4µm Fast Static Random Access Memory (FSRAM) devices are analyzed. Top down deprocessing and planar Transmission Electron Microscopy (TEM) analyses show a unique dislocation in the substrate to be the cause of these failures. The dislocation always occurs at the exact same location within the bitcell layout with respect to the single bit failing data state. The dislocation is believed to be associated with buried contact processing used in this type of bitcell layout.

Challenges and Benefits of Product-Like SRAM in Technology Development

2011 ◽  
Author(s):  
Felix Beaudoin ◽  
Stephen Lucarini ◽  
Fred Towler ◽  
Stephen Wu ◽  
Zhigang Song ◽  
...  
Keyword(s):  
Technology Development ◽  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Development Phase ◽  
High Complexity ◽  
Access Memory ◽  
Integration Schemes ◽  
Front End

Abstract For SRAMs with high logic complexity, hard defects, design debug, and soft defects have to be tackled all at once early on in the technology development while innovative integration schemes in front-end of the line are being validated. This paper presents a case study of a high-complexity static random access memory (SRAM) used during a 32nm technology development phase. The case study addresses several novel and unrelated fail mechanisms on a product-like SRAM. Corrective actions were put in place for several process levels in the back-end of the line, the middle of the line, and the front-end of the line. These process changes were successfully verified by demonstrating a significant reduction of the Vmax and Vmin nest array block fallout, thus allowing the broader development team to continue improving random defectivity.

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