scholarly journals Total ionizing dose effects on innovative silicon-on-insulator static random access memory cell

2019 ◽  
Vol 68 (16) ◽  
pp. 168501
Author(s):  
Shuo Wang ◽  
Yong-Wei Chang ◽  
Jing Chen ◽  
Ben-Yan Wang ◽  
Wei-Wei He ◽  
...  
Keyword(s):  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Silicon On Insulator ◽  
Static Random Access Memory ◽  
Total Ionizing Dose ◽  
Access Memory ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

Analysis of Total Ionizing Dose Effects on a Pseudo-Static Random Access Memory (PSRAM)

2012 ◽  
Vol 49 (1) ◽  
pp. 69-76
Author(s):  
T. H. Both ◽  
G. I. Wirth ◽  
E. C. F. Pereira Junior ◽  
O. L. Goncalez ◽  
R. G. Vaz ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Total Ionizing Dose ◽  
Access Memory ◽  
Dose Effects ◽  
Total Ionizing Dose Effects

A Novel Peripheral Circuit for SWSFET Based Multivalued Static Random-Access Memory

2020 ◽  
Vol 29 (01n04) ◽  
pp. 2040010
Author(s):  
R. H. Gudlavalleti ◽  
B. Saman ◽  
R. Mays ◽  
Evan Heller ◽  
J. Chandy ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Field Effect Transistors ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Input Gate ◽  
Reduction In Area

This paper presents the peripheral circuitry for a multivalued static random-access memory (SRAM) based on 2-bit CMOS cross-coupled inverters using spatial wavefunction switched (SWS) field effect transistors (SWSFETs). The novel feature is a two quantum well/quantum dot channel n-SWSFET access transistor. The reduction in area with four-bit storage-per-cell increases the memory density and efficiency of the SRAM array. The SWSFET has vertically stacked two-quantum well/quantum dot channels between the source and drain regions. The upper or lower quantum charge locations in the channel region is based on the input gate voltage. The analog behavioral modeling (ABM) of the SWSFET device is done using conventional BSIM 3V3 device parameters in 90 nm technology. The Cadence circuit simulations for the proposed memory cell and addressing/peripheral circuitry are presented.

Design of Low Power with Expanded Noise Margin Subthreshold 12T SRAM Cell for Ultra-Low Power Devices

2020 ◽  
pp. 2150106
Author(s):  
Harekrishna Kumar ◽  
V. K. Tomar
Keyword(s):  
Power Dissipation ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Access Time ◽  
Access Memory ◽  
Subthreshold Region ◽  
Noise Margin ◽  
Static Noise

In the proposed work, a differential write and single-ended read half-select free 12 transistors static random access memory cell is designed and simulated. The proposed cell has a considerable reduction in power dissipation with better stability and moderate performance. This cell operates in subthreshold region and has a higher value of read static noise margin as compared to conventional six transistors static random access memory cell. A power cut-off technique is utilized between access and pull-up transistors during the write operation. It results in an increase in write static noise margin as compared to all considered cells. In the proposed cell, read and write access time is improved along with a reduction in read/write power dissipation as compared to conventional six transistors static random access memory cell. The bitline leakage current in the proposed cell is reduced which improves the [Formula: see text] ratio of the cell under subthreshold region. The proposed cell occupies less area as compared to considered radiation-hardened design 12 transistors static random access memory cell. The computed electrical quality metric of proposed cell is better among considered static random access memory cells. Process variation analysis of read stability, access time, power dissipation, read current and leakage current has been performed with the help of Monte Carlo simulation at 3,000 points to get more soundness in the results. All characteristics of static random access memory cells are compared at various supply voltages.

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